X-Ray Diffraction Study of Defects in Zinc-Diffusion-Doped Silicon

V. V. Privezentsev

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X-Ray Diffraction Study of Defects in Zinc-Diffusion-Doped Silicon

机译：锌扩散掺杂硅缺陷的X射线衍射研究

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Samples of CZ n-Si(111) are prepared by high-temperature zinc-diffusion annealing fol-lowed by quenching and are studied by X-ray diffraction. The silicon contains an initial phosphorus impurity and zinc-compensating admixture at concentrations NP = 1.5 × 10~(14) cm~(-3) and N_(Zn) = 1 × 10~(14) cm~(-3); i.e., the relation N_P/2 < N_(Zn) < N_P is fulfilled. Microdefects are studied by double-and triple-crystal X-ray diffraction in the dispersion free modes (n, -n) and (n, -n, +n). The samples are found to contain microdefects with two characteristic sizes (average sizes of about 1 μm and 70 nm). The interplanar distance in the near-surface layer with a thickness of 0.1 μm is smaller than this parameter in the remaining matrix, the difference being equal to d_0 Δd/d_0 ≈ 2 × 10~(-5). This layer contains mainly vacancy-type microdefects. The angle between the reflect-ing planes and the local surface relief is Δψ = (7 ± 1) arcmin

机译：CZ n-Si Zn（111）样品是通过高温锌扩散退火，随后淬火制备的，并通过X射线衍射研究。硅包含初始磷杂质和锌补偿混合物，浓度为NP = 1.5×10〜（14）cm〜（-3）和N_（Zn）= 1×10〜（14）cm〜（-3）;即，满足关系N_P / 2 ＜N_（Zn）＜N_P。通过无色散模式（n，-n）和（n，-n，+ n）的双晶体和三晶体X射线衍射研究微缺陷。发现样品包含具有两个特征尺寸（平均尺寸约为1μm和70 nm）的微缺陷。厚度为0.1μm的近表层中的平面间距小于其余矩阵中的该参数，其差等于d_0Δd/ d_0≈2×10〜（-5）。该层主要包含空位型微缺陷。反射平面与局部表面起伏之间的角度为Δψ=（7±1）arcmin

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《Crystallography reports》 |2013年第7期|共7页
作者
V. V. Privezentsev;
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正文语种 eng
中图分类晶体学;
关键词
X-Ray; Diffraction; Study;

机译：X射线;衍射;研究;

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1. X-Ray Diffraction Study of Defects in Zinc-Diffusion-Doped Silicon [J] . V. V. Privezentsev Crystallography reports . 2013,第7期

机译：锌扩散掺杂硅缺陷的X射线衍射研究
2. X-ray diffraction study of the effect of neutron irradiation on the defect formation in silicon crystals grown by the Czochralski method and annealed at high temperatures [J] . Makara VA, Novikov NN, Patsai BD Physics of the solid state . 2005,第10期

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3. Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction [J] . V. P. Popov, I. V. Antonova, J. Bak-Misiuk, Materials science in semiconductor processing . 2001,第1a3期

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4. Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices [C] . Michael Dudley, Xianrong Huang, William M. Vetter, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

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X-Ray Diffraction Study of Defects in Zinc-Diffusion-Doped Silicon

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