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首页> 外文期刊>Microsystem technologies >Capacitive micromachined ultrasonic transducer: transmission performance evaluation under different driving parameters and membrane stress for underwater imaging applications
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Capacitive micromachined ultrasonic transducer: transmission performance evaluation under different driving parameters and membrane stress for underwater imaging applications

机译：电容式微机械超声换能器：在不同驱动参数和水下成像应用中的膜应力下的传输性能评估

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摘要

Transmission performance of a CMUT element in terms of output pressure and displacements was evaluated. A SIMULINK model of single CMUT element based on mechanical model of MEMS capacitor was used and the analyses were performed under different ac and dc conditions. 2.6 mu m thick Si, Poly-Si and Si(3)Ni(4)membranes with a radius 60 mu m were used to obtain results for underwater imaging application. Relation between membrane stress and outputs of CMUT was also investigated using SIMULINK model for commonly used CMUT membrane made of Si(3)Ni(4)and polysilicon membrane under different electrical driving parameters. It was observed that different ac signal inputs (sine, square and sawtooth) showed different effects on CMUTs pressure and displacement characteristics. Our results indicated that the maximum output pressure and displacement were obtained in a square waveform. In addition, although stress on membrane increases the displacement and pressure of CMUT membrane made of Poly-Si, quality factor inversely proportional to stress on membrane. Membrane stress has adverse effect on Si(3)Ni(4)membrane transmission outputs. The used model in this study might enable to determine optimum driving electrical inputs and stress on membrane to control CMUT outputs in terms of output pressure, displacement, quality factor and bandwitdh.
机译：评估了在输出压力和位移方面CMUT元件的传输性能。基于MEMS电容器机械模型的单一CMUT元素的模拟模型，在不同AC和DC条件下进行分析。使用半径60μm的2.6μm厚的Si，Poly-Si和Si（3）Ni（4）膜用于获得水下成像应用的结果。还使用Si（3）Ni（4）和多晶硅膜在不同电驱动参数下的常用CMUT膜的模拟模型研究了膜应力与CMUT输出的关系。观察到，不同的AC信号输入（正弦，方形和锯齿）对CMUT压力和位移特性显示出不同的影响。我们的结果表明，在方波形中获得最大输出压力和位移。此外，尽管对膜的应力增加了由多Si制成的CMUT膜的位移和压力，但质量因子与膜上的应力成反比。膜应力对Si（3）Ni（4）膜传递输出具有不利影响。本研究中的使用模型可以使得能够在输出压力，位移，质量因子和带丝方面测定膜上的最佳驱动电气输入和应力以控制CMUT输出。

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