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首页> 外文期刊>Crystallography reports >Thermally stimulated relaxation of misfit strains in Si1-xGex/Si(100) heterostructures with different buffer layers
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Thermally stimulated relaxation of misfit strains in Si1-xGex/Si(100) heterostructures with different buffer layers

机译：热激发的Si1-xGex / Si（100）异质结构中具有不同缓冲层的失配应变的弛豫

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摘要

The regularities of the defect formation in Si1-xGex/Si heterostructures (x = 0.15 and 0.30), consisting of a low-temperature Si buffer layer and a SiGe solid solution, during their growth and subsequent annealings at temperatures 550-650 degrees C are investigated by the methods of optical and transmission electron microscopy and X-ray diffraction. It is shown that the misfit-strain relaxation by plastic deformation under the conditions studied occurs most intensively in heterostructures with low-temperature SiGe buffer layers. The maximum degree of misfit-strain relaxation (no higher than 45%) is observed in the heterostructures with x = 0.30 after annealing at 650 degrees C. The results obtained are explained by the effect of the nature and concentration of dislocation-nucleation centers, existing in low-temperature buffer layers, on the characteristics of the formation of a dislocation structure in the heterostructures under consideration. (C) 2005 Pleiades Publishing, Inc.
机译：由低温Si缓冲层和SiGe固溶体组成的Si1-xGex / Si异质结构（x = 0.15和0.30）在其生长以及随后在550-650摄氏度的温度下退火期间形成缺陷的规律为通过光学和透射电子显微镜以及X射线衍射的方法进行了研究。结果表明，在所研究的条件下，塑性变形引起的失配应变松弛在具有低温SiGe缓冲层的异质结构中最强烈地发生。在650℃退火后，在x = 0.30的异质结构中观察到最大失配应变弛豫程度（不高于45％）。通过位错成核中心的性质和浓度的影响可以解释所获得的结果，存在于低温缓冲层中，关于在异质结构中形成位错结构的特性正在考虑中。 （C）2005年Pleiades Publishing，Inc.

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