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Ionic conductivity of ScF3 single crystals (ReO3 type)

机译:ScF3单晶(ReO3型)的离子电导率

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Electrical conductivity sigma of ScF3 single crystals (sp. gr. , ReO3 structure type) has been studied by impedance spectroscopy and compared with the electrical conductivity of rare earth HoF3 (beta-YF3 type) and LaF3 (tysonite type) trifluorides. ScF3 crystals obtained by Bridgman directional solidification have ionic conductivity sigma = 4 x 10(-8) S/cm at 673 K. It is smaller than the sigma values for LaF3 (sp. gr. ) and HoF3 (sp. gr. Pnma) single crystals by a factor of 10(4)-10(5). The low conductivity of ScF3 crystals is due to the weak coordinating ability (coordination number CN = 6) and low electronic polarizability (alpha (cat) = 1.1 (3)) of Sc3+ ions. Mobile V (F) (+) vacancies and less mobile interstitial V (i) (-) ions (defects are formed according to the Frenkel mechanism) are involved in the ion transport. HoF3 and LaF3 single crystals have a high coordinating ability (CN = 9 for Ho3+ and CN = 11 for La3+) and a high electronic polarizability of cations (alpha (cat) = 1.6-1.9 (3) for Ho3+ and alpha (cat) = 2.2 (3) for La3+). Only mobile V (F) (+) vacancies (defects are formed according to the Schottky mechanism) are involved in ion transport.
机译:ScF3单晶(sp。gr。,ReO3结构类型)的电导率σ已通过阻抗谱进行了研究,并与稀土HoF3(β-YF3型)和LaF3(钛铁矿型)三氟化物的电导率进行了比较。通过Bridgman定向凝固获得的ScF3晶体在673 K时的离子电导率sigma = 4 x 10(-8)S / cm。它小于LaF3(sp。gr。)和HoF3(sp。gr。Pnma)的sigma值。单晶体的10(4)-10(5)倍。 ScF3晶体的低电导率归因于Sc3 +离子的弱配位能力(配位数CN = 6)和低电子极化率(α(cat)= 1.1(3))。迁移的V(F)(+)空位和较少的迁移的间隙V(i)(-)离子(根据Frenkel机理形成缺陷)参与离子迁移。 HoF3和LaF3单晶具有很高的配位能力(对于Ho3 +,CN = 9,对于La3 +,CN = 11),并且阳离子的电子极化率高(对于Ho3 +和alpha(cat)= 1.6-1.9(3)= La3 +的2.2(3)。离子迁移只涉及可移动的V(F)(+)空位(根据肖特基机理形成缺陷)。

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