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Melt Nonstoichiometry and Defect Structure of ZnGeP2 Crystals

机译:ZnGeP2晶体的熔体非化学计量和缺陷结构

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The defect structure of ZnGeP2 crystals grown from a melt by the vertical BrDEgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P2, and Ge. Nanoinclusions of germanium phosphDEe are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.
机译:研究了通过垂直BrDEgman方法从熔体中生长的ZnGeP2晶体的缺陷结构。熔体组成与化学计量的偏差导致形成条纹和其他相的夹杂物,这些相被观察为平行于生长轴取向的结构(链)。根据微量分析数据,夹杂物组成对应于ZnGeP2,Zn3P2和Ge的混合物。通过透射电子显微镜检测磷化锗锗的纳米夹杂物。 X射线形貌揭示了四种类型的缺陷。铸锭中心部位的主要缺陷与成分波动有关,而新形成的位错基本上是单一的。大多数位错形成在晶体外围。

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