Real Structures of Doped Lead Telluride Crystals

V. P. Zlomanov; T. A. Kuznetsova; S. G. Dorofeev; V. D. Volodin; O. I. Tananaeva

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Real Structures of Doped Lead Telluride Crystals

机译：掺杂碲化铅晶体的真实结构

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A relationship between the real crystal structure and the doping level was proposed based on experimental data on the real structures of PbTe crystals with different Cr, Co, Ni, and In contents. Two composition regions were revealed for these crystals. One region is characterized by the presence of impurity atmospheres at dislocations as the main type of impurity inhomogeneity, whereas impurity-rich microprecipitates prevail in the second region. Possible reasons for the formation of solid solutions supersaturated with impurity ions were analyzed. The influence of thermal treatment on the real structure and galvanomagnetic properties of the crystals was investigated.

机译：基于不同Cr，Co，Ni和In含量的PbTe晶体的真实结构的实验数据，提出了真实晶体结构与掺杂水平之间的关系。这些晶体显示出两个组成区域。一个区域的特征是位错处存在杂质气氛，这是杂质不均匀性的主要类型，而第二区域盛行着富含杂质的微沉淀物。分析了形成杂质离子过饱和固溶体的可能原因。研究了热处理对晶体的真实结构和电磁性能的影响。

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《Crystallography reports》 |2002年第1期|共8页
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V. P. Zlomanov; T. A. Kuznetsova; S. G. Dorofeev; V. D. Volodin; O. I. Tananaeva;
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正文语种 eng
中图分类晶体学;
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1. Real Structures of Doped Lead Telluride Crystals [J] . V. P. Zlomanov, T. A. Kuznetsova, S. G. Dorofeev, Crystallography reports . 2002,第Suppla1期

机译：掺杂碲化铅晶体的真实结构
2. Simulation of Core-Level Binding Energy Shifts in Germanium-Doped Lead Telluride Crystals [J] . A. S. Zyubin, S. N. Dedyulin, L. V. Yashina Russian Journal of Inorganic Chemistry . 2007,第2期

机译：掺锗碲化铅晶体中核心能级结合能转移的模拟
3. Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals [J] . D. M. Freik, V. M. Boichuk, L. I. Mezhilovskaya Inorganic materials . 2004,第10期

机译：铟掺杂碲化铅晶体中铟的电荷状态和点缺陷
4. Electrical properties of lead telluride single crystals doped with Gd [C] . Todosiciuc A., Nicorici A., Condrea E., International Semiconductor Conference;CAS 2012 . 2012

机译：掺G的碲化铅单晶的电性能
5. New approaches to chalcogenide materials for thermoelectrics: Lead telluride-based nanostructures and facile synthesis of tetrahedrite and doped derivatives. [D] . James, Derak. 2015

机译：用于热电的硫族化物材料的新方法：基于碲化铅的纳米结构以及四面体和掺杂衍生物的简便合成。
6. Synthesis and structure of undoped and indium-doped thermoelectric lead telluride nanoparticles [O] . Kamal Kadel, Latha Kumari, Xuewen Wang, 2014

机译：未掺杂和铟掺杂的热电碲化铅纳米粒子的合成与结构
7. Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method [O] . Zayachuka, D. M., Ilyinaa, O. S., Pashuka, A. V., 2014

机译：Eu杂质的偏析随其浓度的变化而变化通过Bridgman方法熔化用于生长碲化铅掺杂的晶体
8. X-Ray Diffraction Studies of Bismuth-Doped Lead Dioxide Electrodes, of the Radiation-Damaged Benzene Chromium Tricarbonyl Crystal Structure, and of Selected Organometallic Compounds [R] . Kim, S. 1987

机译：铋掺杂的二氧化铅电极，辐射损伤的苯三氯化铬晶体结构和选定的有机金属化合物的X射线衍射研究

Real Structures of Doped Lead Telluride Crystals

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