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首页> 外文期刊>Crystallography reports >Structure of Porous Surface Layers of Single-Crystal GaAs(001) Wafers from Data of X-ray Diffractometry and Reflectometry
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Structure of Porous Surface Layers of Single-Crystal GaAs(001) Wafers from Data of X-ray Diffractometry and Reflectometry

机译：X射线衍射法和反射计数据的单晶GaAs（001）晶片多孔表面层结构

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The surface morphology and structure parameters of the surface layers of the single-crystal GaAs(001) wafers subjected to He~+ ion implantation (E = 300 keV, D = 10~(16) atoms/cm~2) and subsequent electrochemical etching in a 0.5 M H_2SO_4 aqueous solution are investigated by X-ray reflectometry and doublecrystal X-ray diffractometry. The strain and amorphization profiles over the layer thickness are determined from X-ray diffraction data. The density of surface layers, their thickness, and the changes of the surface relief upon etching are evaluated from the reflectometric data. The experimental parameters of the studied layers are compared with the theoretical distributions of implanted impurities and intrinsic point defects, which are calculated by the Monte Carlo method. A correlation is revealed between the layer thickness and the depth of the maximum defect concentration. It is found that the electrochemical etching predominantly occurs in strongly amorphized regions of the surface layer and does not lead to a change in the total layer thickness. The results of X-ray diffraction investigations are confirmed by scanning electron microscopy.
机译：进行He〜+离子注入（E = 300 keV，D = 10〜（16）atoms / cm〜2）并随后进行电化学蚀刻的GaAs（001）单晶晶片的表面层的表面形态和结构参数用X射线反射法和双晶X射线衍射法研究了0.5 M H_2SO_4水溶液中的H 2 SO 4。从X射线衍射数据确定层厚度上的应变和非晶化轮廓。根据反射数据评估表面层的密度，其厚度以及蚀刻后表面起伏的变化。将研究层的实验参数与通过蒙特卡洛方法计算的注入杂质和本征点缺陷的理论分布进行了比较。揭示出层厚度与最大缺陷浓度的深度之间的相关性。发现电化学蚀刻主要发生在表面层的强烈非晶化区域中，并且不会导致总层厚度的变化。 X射线衍射研究的结果通过扫描电子显微镜确认。

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