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首页> 外文期刊>Crystallography reports >Study of Doped Higher Manganese Silicides Crystals by Transmission Electron Diffraction and Electron Backscatter Diffraction
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Study of Doped Higher Manganese Silicides Crystals by Transmission Electron Diffraction and Electron Backscatter Diffraction

机译：透射电子衍射和电子反向散射衍射研究掺杂的高锰硅化物晶体

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摘要

The microstructure of Al-, Ge-, and Mo-doped higher manganese silicide crystals (HMS), grown by the Bridgman method have been investigated by transmission electron diffraction, electron backscatter diffraction, scanning electron microscopy, and X-ray energy-dispersive spectrometry. It is shown that the matrix crystal has the Mn_4Si_7 structure. The introduction of Ge and Mo impurities into an HMS crystal results in the precipitation of Si–Ge solid solution and molybdenum disilicide. The size of precipitates varies in a wide range: from several nanometers to several hundreds of micrometers. The following orientation relationships between Ge–Si precipitates and the Mn_4Si_7 crystal were determined: (112)[110 ] Ge–Si || (010)[100] Mn_4Si_7. Polycrystalline MoSi2 precipitates form a multicomponent texture along the [001] Mn_4Si_7 direction. Small amounts of cubic MnSi and Al–Mn–Si alloy precipitates were revealed. In addition, Al oxide was observed mainly in crystal pores. It is shown that 0.5–0.8 at % Al, 0.4–0.6 at % Mo, and 1.5–2.0 at % Ge impurities are incorporated into the Mn_4Si_7 lattice.
机译：通过透射电子衍射，电子背散射衍射，扫描电子显微镜和X射线能谱分析研究了通过Bridgman方法生长的Al，Ge和Mo掺杂的高锰硅化物晶体（HMS）的微观结构。 。显示出基体晶体具有Mn_4Si_7结构。在HMS晶体中引入Ge和Mo杂质会导致Si-Ge固溶体和二硅化钼的沉淀。沉淀物的大小范围很广：从几纳米到几百微米。确定了Ge-Si析出物与Mn_4Si_7晶体之间的以下取向关系：（112）[110] Ge-Si || （010）[100] Mn_4Si_7。多晶MoSi2沉淀物沿[001] Mn_4Si_7方向形成多组分织构。少量立方锰硅和铝锰硅合金沉淀被发现。另外，主要在晶孔中观察到Al氧化物。结果表明，在Al_4Si_7晶格中掺入了0.5-0.8 at％的Al，0.4-0.6 at％的Mo和1.5-2.0 at％的Ge杂质。

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