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首页> 外文期刊>Crystallography reports >Structural and Electrical Properties of InAlAs/InGaAs/InAlAs HEMT Heterostructures on InP Substrates with InAs Inserts in Quantum Well
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Structural and Electrical Properties of InAlAs/InGaAs/InAlAs HEMT Heterostructures on InP Substrates with InAs Inserts in Quantum Well

机译：量子阱中具有InAs插入物的InP衬底上InAlAs / InGaAs / InAlAs HEMT异质结构的结构和电性能

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摘要

A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In0.53Ga0.47As quantum wells (QWs) on the structural and electrical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructures with one-sided delta-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < <(h)over bar>omega < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.
机译：对引入In0.53Ga0.47As量子阱（QWs）的厚度为1.7至3.0 nm的纳米级InAs插入物对In0.52Al0.48As / In0.53Ga0.47As / In0的结构和电性能的影响进行复杂的研究。已经进行了具有单侧δ-Si掺杂的52Al0.48As异质结构。通过透射电子显微镜研究了组合QW的结构质量。建立了量子阱中电子迁移率与InAs插入层厚度及其制造技术之间的相关性。通过透射电子显微镜和光致发光光谱研究了InP（衬底）/ InAlAs（缓冲）界面的特定特征。由于InP / InAlAs界面处的电子跃迁，在光子能量1.24 eV （h）超过Ω<1.38 eV范围内，光致发光光谱中的峰的能量位置之间的关系建立在界面区域中揭示的结构特征。发现在InP / InAlAs接口上无意中形成了一个附加的QW。该量子阱的参数取决于异质结构生长技术。

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