Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry

A. A. Lomov; V. A. Bushuev; V. A. Karavanskii; S. Bayliss

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Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry

机译：高分辨率X射线衍射法表征多孔锗层的结构

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The surface morphology and the structure of porous germanium layers obtained by chemical etching of n-type single-crystal Ge(111) substrates with their subsequent annealing in hydrogen atmosphere are studied by high-resolution X-ray diffractometry. It is established that upon etching a 1.5 to 2.0-μm-thick porous germanium layer is formed, which contains quasi-ordered microinhomogeneities in the form of elongated pits with characteristic dimensions of 1 μm and an average distance between them of 3-4 μm. The layer bulk has pores with radii ranging within 25-30 nm and nanocrystallites with an average size of 10 nm, with the average porosity being 56%.

机译：通过高分辨率X射线衍射研究了通过化学刻蚀n型单晶Ge（111）衬底并随后在氢气氛中退火获得的多孔锗层的表面形态和结构。已经确定，通过蚀刻形成1.5至2.0μm厚的多孔锗层，该多孔锗层以细长凹坑的形式包含准次序的微不均匀性，其特征尺寸为1μm，并且它们之间的平均距离为3-4μm。该层块具有半径在25-30nm范围内的孔和平均尺寸为10nm的纳米微晶，平均孔隙率为56％。

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《Crystallography reports》 |2003年第2期|共9页
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A. A. Lomov; V. A. Bushuev; V. A. Karavanskii; S. Bayliss;
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1. Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry [J] . A. A. Lomov, V. A. Bushuev, V. A. Karavanskii, Crystallography reports . 2003,第2期

机译：高分辨率X射线衍射法表征多孔锗层的结构
2. High-resolution X-ray diffractometry and X-ray reflectometry techniques for structural studies of complicated thin-layered heterostructures: Complementarity between Fourier Transform-based procedures and simulation softwares [J] . O. Durand, A. De Rossi, A. Bouchier Journal de Physique, IV: Proceedings of International Conference . 2004,第0期

机译：用于复杂薄层异质结构的结构研究的高分辨率X射线衍射仪和X射线反射仪技术：基于傅立叶变换的过程与仿真软件之间的互补性
3. High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates [J] . Stephen Mudie, Konstantin Pavlov, Michael Morgan, Surface review and letters . 2003,第2a3期

机译：蓝宝石衬底上生长的GaN / AlN结构中界面层的高分辨率X射线衍射研究
4. Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X-Ray Diffractometry [C] . J. Kozlowski, R. PASZKIEWICZ, M. TLACZALA Fourth International Conference on Nitride Semiconductors . 2002

机译：X射线衍射法表征（Al，Ga）N外延层的结构
5. Profile structures of ultrathin organic films on germanium/silicon multilayer substrates by x-ray interferometry/holography. [D] . Xu, Songtao. 1993

机译：通过X射线干涉法/全息术在锗/硅多层基板上的超薄有机膜的轮廓结构。
6. Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction [O] . Andrei Benediktovitch, Alexei Zhylik, Tatjana Ulyanenkova, -1

机译：通过共面和非共面X射线衍射表征在（011）和（111）取向硅上生长的锗层中的位错
7. Characterization of porous silicon layers by means of X-ray double-crystal diffractometry. [O] . Hiroshi Sugiyama, Osamu Nittono 1989

机译：通过X射线双晶衍射法表征多孔硅层。

Characterization of the Structure of Porous Germanium Layers by High-Resolution X-ray Diffractometry

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