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首页> 外文期刊>Modelling and simulation in materials science and engineering >Revisiting dislocation reactions and their role in uniaxial deformation of copper single crystal micro-pillars
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Revisiting dislocation reactions and their role in uniaxial deformation of copper single crystal micro-pillars

机译：重新探查脱位反应及其在铜单晶微柱的单轴变形中的作用

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摘要

The present work focuses on the discrete dislocation dynamics simulations performed for analyzing various dislocation reactions in copper single crystals during uniaxial tensile deformation. The dislocation dynamics simulations were carried out with initial random distribution of Frank-Read sources. The crystals were subjected to tensile loading along [1 0 0], [1 1 1], [1 1 2] and [2 1 3] crystallographic axes. The hardening behavior of a metal single crystal is controlled, to a large extent, by dislocation interactions leading to junction formation and cross-slip. The interactions occurring between the dislocations, formation of junctions, occurrence of cross-slip, their contribution to hardening and softening, and dislocation density evolution were analyzed. Also, analysis was carried out to identify the number of occurrences of different reactions as a function of crystallographic orientations of loading axes. The strength due to self-hardening and latent-hardening dislocation reactions on the deformation of crystal was then analyzed. We have attempted to analyze the hardening and softening caused by various reactions including cross-slip. The self and latent hardening coefficients do not appear to depend on the crystallographic orientation of loading axes and are generally in agreement with the previous studies.
机译：目前的工作侧重于在单轴拉伸变形期间分析铜单晶中各种位错反应的离散位错动力学模拟。使用坦率读取源的初始随机分布进行了脱位动态模拟。将晶体沿[10 0]，[111]，[11]和[21 3]晶体轴进行拉伸载荷。在很大程度上，通过使得通路形成和交叉滑动的位错相互作用在很大程度上控制金属单晶的固化行为。分析了位于脱位，结的形成，交叉的形成，交叉的发生，它们对硬化和软化的贡献，以及位错密度进化之间的相互作用。而且，进行分析以确定作为装载轴的晶体取向的函数的不同反应的次数。然后分析了对晶体变形的自硬化和潜在的脱位反应引起的强度。我们试图分析由包括滑倒等各种反应引起的硬化和软化。自我和潜在的硬化系数似乎不依赖于装载轴的晶体取向，并且通常与先前的研究一致。

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