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首页> 外文期刊>Crystallography reports >Growth of ZnSe1-x S (x) solid solution crystals from vapor phase
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Growth of ZnSe1-x S (x) solid solution crystals from vapor phase

机译：气相生长ZnSe1-x S（x）固溶体晶体

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Partially faceted ZnSe1 - x S (x) solid solution crystals have been grown from a vapor phase in a closed stationary horizontal system. The growth has been performed in cylindrical quartz ampoules-similar to 10 mm in diameter and evacuated to a residual pressure of less than similar to 10(-3) Pa-at a temperature of 1050A degrees C and a temperature drop between the source and growth zones of 10-16A degrees C. The crystal structure, optical absorption, and composition inhomogeneity along the ingot length have been investigated by X-ray diffractometry and optical spectroscopy in the wavelength range of 300-3000 nm. The solid-solution composition range corresponding to cubic polymorphs is determined. The concentration dependences of the lattice parameter and band gap are presented.
机译：在封闭的固定水平系统中，部分晶面的ZnSe1-x S（x）固溶体晶体是从气相生长的。生长是在直径约10 mm的圆柱形石英安瓿中进行的，并在1050A的温度和源与生长之间的温度下降的条件下抽空至小于类似于10（-3）Pa的残余压力。区域的温度范围为10-16A摄氏度。已通过X射线衍射和光谱在300-3000 nm的波长范围内研究了沿晶锭长度的晶体结构，光吸收和成分不均匀性。确定对应于立方多晶型物的固溶体组成范围。给出了晶格参数和带隙的浓度依赖性。

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