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Analysis of Synthetic Diamond Single Crystals by X-Ray Topography and Double-Crystal Diffractometry

机译：X射线形貌和双晶体衍射分析合成金刚石单晶

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Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pres-sure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The forma-tion of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient
机译：通过双晶X射线衍射和形貌分析了在高压下合成的金刚石单晶的结构特征以及通过化学气相沉积（CVD）生长的同质外延膜。使用Ge单色仪对金刚石晶体进行衍射分析的条件已得到优化。揭示了晶体生长过程中形成的主要结构缺陷（位错，堆垛层错，生长条纹，第二相夹杂物等）。基于X射线衍射数据估算高压/高温（HPHT）金刚石基材中的氮浓度。通过平面波形貌揭示了外延结构中薄膜-基底界面处的位错束的形成。这些位错可能是由于基底和薄膜之间的晶格失配引起的弹性宏观应力的松弛所致。计算了CVD金刚石膜中塑性松弛开始的临界厚度。在优化晶体生长技术中研究真实钻石结构的实验技术被证明是高效的

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