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首页> 外文期刊>Crystallography reports >Ferroelectricity and Antiferroelectricity in CuCrOs_2-type Multiferroic Semiconductors
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Ferroelectricity and Antiferroelectricity in CuCrOs_2-type Multiferroic Semiconductors

机译：CuCrOs_2型多铁性半导体中的铁电和反铁电

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摘要

Multiferroic semiconductors of the CuCrO_2 type are considered. These materials, in the presence of free charge carriers, allow for the existence of opposite domains (in the ferroelectric FE_d phase), along with ordinary 180° domains (in the FE phase). The magnetization phase transition in a chiral multiferroic, allowing for piezoelectric effects in an antiferromagnet with a layered triangular structure which result in an incommensurate (helicoidal) spin structure, is phenomenologically described. The behavior of the ferroelectric polarization in the considered phases is characterized. The antiferroelectric is considered a system of parallel layers alternating in chirality sign with oppositely directed polarization vectors. The possibility of antiferro-electric phase transition due to the specific features of the dipole-dipole interaction is discussed.
机译：考虑了CuCrO_2类型的多铁性半导体。这些材料在存在自由电荷载流子的情况下允许存在相反的畴（在铁电FE_d相中）以及普通的180°畴（在FE相中）。从现象学上描述了手性多铁性物中的磁化相变，其允许具有层状三角形结构的反铁磁体中产生压电效应，从而导致不对称的（螺旋形）自旋结构。表征了所考虑的相中铁电极化的行为。反铁电被认为是由手性符号和相反方向的极化矢量交替的平行层组成的系统。讨论了由于偶极-偶极相互作用的特定特征而引起的反铁电相变的可能性。

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