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首页> 外文期刊>Nano Energy >Novel approach toward hole-transporting layer doped by hydrophobic Lewis acid through infiltrated diffusion doping for perovskite solar cells
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Novel approach toward hole-transporting layer doped by hydrophobic Lewis acid through infiltrated diffusion doping for perovskite solar cells

机译：通过渗透扩散掺杂掺杂渗透扩散掺杂的新型探其掺杂的渗透性太阳能电池的新方法

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摘要

In this work, an alternative processing route for doping of hole-transporting layer (HTL) with improved hole extraction and passivation of anionic Pb-I antisite defects at the perovskite/HTL heterojunction is reported for the first time in perovskite solar cells (PSCs), referred as the infiltrated diffusion doping (INDD) method. In INDD processing, HTL is prepared by depositing the hole-transporting material and dopant sequentially in separate steps, involving deposition of the hole-transporting material (PTAA) in the first step, followed by the deposition of novel fluorine-containing hydrophobic Lewis acid dopant (LAD) in the second step, employing an orthogonal solvent with respect to the PTAA. To the best of our knowledge, it is a pioneer approach which replaces traditional blend casting doping technique for HTL. Consequently, the optimized PSC based on LAD doped PTAA by INDD processing shows a champion power conversion efficiency (PCE) of 20.32%, marking a record PCE in PSCs with a single dopant for PTAA reported to date, and superior long-term stability, retaining 93% of their initial efficiency in ambient environment without any encapsulation up to 1500 h.
机译：在这项工作中，首次在Perovskite太阳能电池（PSC）中首次报道具有改进的空穴传输层（HTL）的掺杂空穴传输层（HTL）的替代处理途径，其具有改进的孔/ HTL异质结的钙钛矿/ HTL异质结的钝化物缺陷，称为渗透扩散掺杂（INDD）方法。在INDD处理中，通过在单独的步骤中顺序将空穴传输材料和掺杂剂依次沉积，涉及在第一步中沉积空穴传输材料（PTAA），然后沉积新的含氟疏水式路易斯酸掺杂剂（LAD）在第二步中，采用正交溶剂相对于PTAA。据我们所知，它是一种先驱方法，取代了用于HTL的传统混合铸造掺杂技术。因此，基于LAD掺杂PTAA的优化PSC通过IDDD处理显示了20.32％的冠军电力转换效率（PCE），标记PSC中的记录PCE，具有迄今为止报告的PTAA的单一掺杂剂，以及卓越的长期稳定性，保持在环境环境中初始效率的93％，没有任何封装的封装，高达1500小时。

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