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首页> 外文期刊>Nano Energy >An STM - SEM setup for characterizing photon and electron induced effects in single photovoltaic nanowires
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An STM - SEM setup for characterizing photon and electron induced effects in single photovoltaic nanowires

机译：一种STM - SEM设置，用于在单光伏纳米线中表征光子和电子诱导效果

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摘要

Vertical arrays of semiconductor nanowires show great potential for material-efficient and high-performance solar cells. The characterization and correlation between material structure and properties of the individual nanowires are crucial for the continued performance improvement of such devices. In this work, we developed a method with a scanning tunneling microscope (STM) probe inside a scanning electron microscope (SEM) to enable the studies of single photovoltaic nanowires. The STM probe is used to contact individual nanowires in ensembles. We combine the STM-SEM with an in situ light emitting diode (LED) illumination source to study both the electrical and photovoltaic properties of vertical GaAs nanowires with radial p-i-n junctions. We also illustrate that the local charge separation ability within the nanowires can be studied by electron beam induced current (EBIC) measurements. The in situ SEM setup allows the correlation between properties and nanowire structure. The data show that the quality of the electrical contact to the semiconductor nanowire is crucial to be able to investigate the inherent properties of the nanowires. We have established a procedure to make high-quality ohmic contacts to the nanowires with the STM probe. We also show that the effect of mechanical strain on the electrical properties can be investigated by the STM-SEM setup.
机译：半导体纳米线的垂直阵列显示出材料有效和高性能太阳能电池的巨大潜力。物质结构与各个纳米线的性质之间的表征和相关性对于这种装置的持续性能改善至关重要。在这项工作中，我们开发了一种用扫描电子显微镜（SEM）内的扫描隧穿显微镜（STM）探针的方法，以实现单个光伏纳米线的研究。 STM探针用于在合奏中与各个纳米线联系。我们将STM-SEM与原位发光二极管（LED）照明源相结合，以研究垂直GaAs纳米线的电气和光伏性能，具有径向P-I-N个连接。我们还示出了纳米线内的本地电荷分离能力可以通过电子束感应电流（EBIC）测量来研究。 in situ sem设置允许性能和纳米线结构之间的相关性。数据表明，半导体纳米线的电接触的质量至关重要，能够研究纳米线的固有性质。我们已经建立了一种方法，使高质量的欧姆触点与STM探针进行纳米线。我们还表明，通过STM-SEM设置可以研究机械应变对电性能的影响。

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  • 来源
    《Nano Energy》 |2018年第2018期|共7页
  • 作者

    Holmer Jonatan; Zeng Lunjie; Kanne Thomas; Krogstrup Peter; Nygard Jesper; de Knoop Ludvig; Olsson Eva;

  • 作者单位

    Chalmers Univ Technol Dept Phys S-41296 Gothenburg Sweden;

    Chalmers Univ Technol Dept Phys S-41296 Gothenburg Sweden;

    Univ Copenhagen Niels Bohr Inst Ctr Quantum Devices Univ Pk 5 DK-2100 Copenhagen Denmark;

    Univ Copenhagen Niels Bohr Inst Ctr Quantum Devices Univ Pk 5 DK-2100 Copenhagen Denmark;

    Univ Copenhagen Niels Bohr Inst Ctr Quantum Devices Univ Pk 5 DK-2100 Copenhagen Denmark;

    Chalmers Univ Technol Dept Phys S-41296 Gothenburg Sweden;

    Chalmers Univ Technol Dept Phys S-41296 Gothenburg Sweden;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与动力工程;
  • 关键词

    STM - SEM; Nanowires; Solar cells; EBIC;

    机译：STM - SEM;纳米线;太阳能电池;EBIC;

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