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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

机译：超低阈值连续波和拉伸拉伸Gesn合金中的脉冲激光

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Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 mu m have thresholds of 0.8 kW cm(-2) for nanosecond pulsed optical excitation and 1.1 kW cm(-2) under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
机译：应变的Gesn合金是有前途的，用于实现完全基于IV组元素的光发射器。这里，我们报告用SINX应力源层封装的GESN Microdisk激光器以产生拉伸应变。通过拉伸应变工程将300nm厚的Gesn层，其作为间接带隙半导体的％Sn，其是间接带隙半导体的％Sn转变为支撑激光的直接带隙半导体。在这种方法中，低Sn浓度使得改善的缺陷工程，并且拉伸应变在价带边缘处提供低密度，该频带边缘是光孔带。我们观察超低阈值连续波和脉冲在高达70 k和100 k的温度下的温度。在波长为2.5μm的激光器，在连续波光学激发下为纳秒脉冲光学激发和1.1kWcm（-2）具有0.8kW cm（-2）的阈值。结果为SI光子平台上的单片集成族激光源提供了一条路径。

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