On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Baidus N. V.; Aleshkin V. Ya.; Dubinov A. A.; Krasilnik Z. F.; Kudryavtsev K. E.; Nekorkin S. M.; Novikov A. V.; Rykov A. V.; Reunov D. G.; Shaleev M. V.; Yunin P. A.; Yurasov D. V.

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

机译：关于应变补偿GaAsp层在人工Ge / Si基材上以上1100nm以上的波长发射的indaas / gaas量子孔激光异质结构的应用

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Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 m at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 m at 77 K, for structures grown on Ge/Si substrates.

机译：强调的IngaAs / GaAs量子孔激光结构由来自GaAs基板上的有机金属化合物的气相外延生长，并且基于Si（001），具有外延变质Ge层的Si（001）。为了抑制在InGaAs量子孔的生长期间抑制弹性应力的松弛，施加应变补偿GaAsp层。比较了在各种类型基板上生长的样品的结构和辐射性能。对于在GaAs基材上生长的结构和77k的波长以高达1.1m的波长，获得高达1.24m的波长的刺激辐射，用于在Ge / Si衬底上生长的结构。

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《Semiconductors》 |2018年第12期|共4页
作者
Baidus N. V.; Aleshkin V. Ya.; Dubinov A. A.; Krasilnik Z. F.; Kudryavtsev K. E.; Nekorkin S. M.; Novikov A. V.; Rykov A. V.; Reunov D. G.; Shaleev M. V.; Yunin P. A.; Yurasov D. V.;
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Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

Lobachevsky State Univ Nizhny Novgorod Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;

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1. On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates [J] . Baidus N. V., Aleshkin V. Ya., Dubinov A. A., Semiconductors . 2018,第12期

机译：关于应变补偿GaAsp层在人工Ge / Si基材上以上1100nm以上的波长发射的indaas / gaas量子孔激光异质结构的应用
2. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050-1100-nm spectral range [J] . Duraev VP, Marmalyuk AA, Padalitsa AA, Quantum electronics . 2005,第10期

机译：GaAsP势垒层对在1050-1100nm光谱范围内发射的InGaAs / AlGaAs激光二极管的参数的影响
3. Lasing operation up to 200 K in the wavelength range of 570-590 nm by GaInP/AlGaInP double-heterostructure laser diodes on GaAsP substrates [J] . T. Tanaka, K. Uchida, Y. Ishitani, Applied Physics Letters . 1995,第7期

机译：在GaAsP基板上通过GaInP / AlGaInP双异质结构激光二极管在570-590 nm的波长范围内进行高达200 K的激光操作
4. Gain spectra measurement of strained InGaAsP /GaAsP / AlGaAs single and double quantum well laser structures for wavelengths near 800 nm [C] . A.Oster, F.Bugge, G.Erbert, International symposium on compound semiconductors . 1999

机译：增强光谱法测量应变的InGaAsp / GaASP / Algaas单量子和双量子孔激光结构，用于接近800nm的波长
5. Vertical-cavity surface-emitting lasers with an interactivity quantum-well absorber: Design and applications. [D] . Lim, Sui F. 1998

机译：具有交互式量子阱吸收器的垂直腔面发射激光器：设计和应用。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes [O] . CHEN CW 2012

机译：在GaAsP衬底上生长的InGaAsP层的液相外延生长和表征，用于橙色发光二极管
8. Role of GaAs Bonding Layers in Improving OMVPE Growth and Performance of Strained-Layer InGaAs/AlGaAs Quantum-Well Diode Lasers [R] . Wang, C. A., Choi, H. K. 1991

机译：Gaas键合层在提高应变层InGaas / alGaas量子阱二极管激光器OmVpE生长和性能中的作用

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

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