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首页> 外文期刊>Semiconductors >Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells
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Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells

机译：用INAS单层量子阱的布拉格多量子井结构自发发射的实验研究

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摘要

The time-resolved photoluminescence of a Bragg structure formed by InAs single-layer quantum wells in a GaAs matrix is investigated experimentally. The comparison of photoluminescence spectra recorded from the edge and the surface of the sample indicates that Bragg ordering of the quantum wells leads to substantial modification of the spectra, in particular, to the appearance of additional modes. The spectrum recorded at the edge of the sample features a single line corresponding to the exciton ground state. In the spectrum recorded at the surface, an additional line whose frequency and propagation angle correspond to the Bragg condition for quantum wells, appears at high excitation levels. The calculation of the modal Purcell factor explains the fact that spontaneous emission is enhanced only for specific propagation angles and frequencies, rather than for all angles and frequencies satisfying the Bragg condition.
机译：通过实验研究了通过在GaAs基质中的INAS单层量子阱形成的布拉格结构的时间分辨光致发光。 从边缘记录的光致发光光谱和样品表面的比较表明量子阱的布拉格订购导致光谱的显着改变，特别是额外模式的外观。 记录在样品边缘的光谱具有与激子地面对应的单线。 在所记录在表面的光谱中，频率和传播角度对应于量子孔的布拉格条件的附加线，出现在高励磁水平。 模态斑块因子的计算说明了仅针对特定传播角度和频率增强自发发射的事实，而不是满足布拉格条件的所有角度和频率。

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  • 来源
    《Semiconductors》 |2018年第7期|共4页
  • 作者

    Pozina G.; Kaliteevski M. A.; Nikitina E. V.; Gubaidullin A. R.; Ivanov K. A.; Egorov A. Yu.;

  • 作者单位

    Linkoping Univ Dept Phys Chem &

    Biol IFM S-58183 Linkoping Sweden;

    St Petersburg Natl Res Acad Univ Russian Acad Sci St Petersburg 194021 Russia;

    St Petersburg Natl Res Acad Univ Russian Acad Sci St Petersburg 194021 Russia;

    St Petersburg Natl Res Acad Univ Russian Acad Sci St Petersburg 194021 Russia;

    St Petersburg Natl Res Acad Univ Russian Acad Sci St Petersburg 194021 Russia;

    Ioffe Inst St Petersburg 194021 Russia;

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  • 正文语种 eng
  • 中图分类 半导体物理学;
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