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首页> 外文期刊>Silicon >Dielectric Properties of Basaltic Glass and Glass-Ceramics: Modeling and Applications as Insulators and Semiconductors
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Dielectric Properties of Basaltic Glass and Glass-Ceramics: Modeling and Applications as Insulators and Semiconductors

机译：玄武岩玻璃和玻璃陶瓷的介电性能：建模与应用作为绝缘子和半导体

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Sinai basaltic rocks were melted as glass and casted into disc- and rode-shapes and subjected to thermal treatment to induce crystallization as a glass-ceramic. The dominant crystalline phases were assigned as diopside, with some amounts of anorthite and magnetite crystals. Different techniques were used in that study such as differential thermal analysis, X-ray diffraction, SEM and dielectric properties (dielectric constant and loss beside to the electric conductivity). Glass-ceramic samples that were thermally treated at low temperatures (850 degrees C) gives surface crystalline and coarse-grained textures, while glass-ceramic samples treated at relatively higher temperatures (1000 degrees C) introduced volume crystalline and fine-grained textures. The dielectric constant (epsilon') was measured at 1000 points in the frequency range 42 Hz up to 8MHz. It decreases with increasing the applied frequency and decreases with increasing the crystallization degree, where it varies between 9.99 at 42 Hz and 7.61 at 8 MHz. The dielectric loss values are relatively low (0.68 at 42 Hz down to 0.03 at 8 MHz), whereas the electric conductivity (sigma) values refer to insulator materials (sigma < 10(-8) S/m) at low electric frequencies at 42 Hz and to semiconductor materials at high electric frequencies at 8 MHz (10(-8) < sigma <10(3) S/m). The results show that the glass-ceramic can be used in low dielectric materials in the electronics covering industry.
机译：西奈玄武岩岩石被融化为玻璃并浇铸成圆盘和骑行形状，并进行热处理以诱导结晶作为玻璃陶瓷。主要的结晶相被分配为偶氮旁侧，具有一定量的卤素和磁铁矿晶体。在该研究中使用了不同的技术，例如差分热分析，X射线衍射，SEM和介电性能（介电常数和电导率差的损失）。在低温下热处理的玻璃陶瓷样品（850℃）赋予表面结晶和粗粒纹理，而在相对较高的温度（1000℃）的玻璃陶瓷样品引入体积结晶和细粒纹理。介电常数（epsilon'）在频率范围42 Hz的1000点处测量，高达8MHz。随着施加的频率的增加而降低，随着结晶度的增加而降低，在82Hz的42Hz和7.61时变化。介电损耗值相对较低（在82Hz下为0.03，在8MHz下为0.68），而电导率（Sigma）值在42℃下以低电频率指的是绝缘体材料（Sigma <10（-8）S / m） Hz和8MHz的高电频率下的半导体材料（10（-8）

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