...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Smart Materials & Structures >Extended displacement discontinuity method for analysis of cracks in 2D thermal piezoelectric semiconductors
【24h】

Extended displacement discontinuity method for analysis of cracks in 2D thermal piezoelectric semiconductors

机译：用于分析2D热压电半导体裂缝的扩展位移不连续性方法

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The extended displacement discontinuities method has previously been used for crack analysis of elastic materials, piezoelectric media, magneto-electro-elastic media and piezoelectric semiconductors. Here, this method is extended to study cracks in two-dimensional n-type thermal piezoelectric semiconductors. The extended displacement discontinuities include the conventional displacement discontinuity, electric potential discontinuity, carrier density discontinuity, as well as temperature discontinuity across crack faces; correspondingly, the extended stresses represent conventional stress, electric displacement, electric current, and heat flux. Employing a Fourier transform, the fundamental solutions for a line crack under uniformly distributed extended displacement discontinuities on the crack faces are derived under mechanical, electrical, and heat loading. Based on the obtained fundamental solutions, an extended displacement discontinuity boundary element method is developed. The stress and heat flux intensity factors at the crack tip are calculated under different combined loadings.
机译：延伸的位移不连续性方法先前已被用于弹性材料，压电介质，磁电弹性介质和压电半导体的裂纹分析。这里，该方法扩展到二维N型热压电半导体中的研究裂缝。扩展位移不连续性包括传统的位移不连续性，电势不连续性，载流子密度不连续，以及穿过裂纹面的温度不连续;相应地，扩展应力表示传统的应力，电置换，电流和热通量。采用傅里叶变换，在裂纹面上均匀分布的扩展位移不连续性下线裂纹的基本解决方案源于机械，电气和加热负载下。基于所获得的基本解决方案，开发了扩展位移不连续边界元件方法。裂纹尖端处的应力和热通量强度因子在不同的组合负载下计算。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号