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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Potential of quasi-inverted pyramid with both efficient light trapping and sufficient wettability for ultrathin c-Si/PEDOT:PSS hybrid solar cells
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Potential of quasi-inverted pyramid with both efficient light trapping and sufficient wettability for ultrathin c-Si/PEDOT:PSS hybrid solar cells

机译：对准金字塔的潜力，具有高效光捕获和用于超薄C-Si / PEDOT的充分润湿性：PSS杂交太阳能电池

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摘要

In this paper, a simple and cost-effective wet chemical method is presented to form quasi-inverted pyramids (QIP) on ultrathin c-Si for efficient light trapping and sufficient wettability. The QIP is fabricated by a well-known two-step Ag assisted chemical etching method followed by a post nanostructure rebuilding (NSR) process. The variation of [Ag+] realizes the modulation of QIP size from sub-micro scale to micro scale. The comparable average absorptance value of 50 pm c-Si with double-sided QIP fabricated under 0.5 mM [Ag+] (QIP-50) to that of 182 pm c-Si with double-sided conventional micro-scale pyramid in the spectral range of 300 - 1100 nm demonstrates an over 3.6-fold reduction in material usage. In comparison with nanopores-structured light-trapping configuration, the QIP-50 possesses much smaller specific surface area of similar to 2.39, which alleviates the surface recombination losses. After wet oxidation treatment, the water contact angle (WCA) of QIP-50 (35.73 degrees) can achieve a comparable value to that of wet oxidized polished wafer (33.30 degrees), demonstrating sufficient wettability of the QIP for high efficiency ultrathin c-Si/PEDOT:PSS hybrid solar cells. The finding of QIP with both efficient light trapping and superior wettability provides a new opportunity to improve the performance of ultrathin c-Si/PEDOT:PSS hybrid solar cells with a simple process at low cost.
机译：在本文中，提出了一种简单且经济高效的湿化学方法，以在超薄C-Si上形成准反相金字塔（QIP），以高效的光捕获和充分的润湿性。 QIP通过众所周知的两步AG辅助化学蚀刻方法制造，然后是纳米结构重建（NSR）过程。 [Ag +]的变化意识到从子微观尺度到微尺度的QIP尺寸的调制。 50 pm c-si的相当平均吸收值，双面qip在0.5mm [Ag +]（QIP-50）下，在PM C-Si的182μmC-Si中具有双面常规微级金字塔的光谱范围300 - 1100 nm证明了材料使用量超过3.6倍。与纳米孔结构的光捕集构型相比，QIP-50具有比2.39类似的比较小的表面积，这减轻了表面复合损失。在湿氧化处理后，QIP-50（35.73度）的水接触角（WCA）可以为湿氧化抛光晶片（33.30度）的相当值，表明QIP的高效超薄C-Si的纯净性润湿性/ PEDOT：PSS混合太阳能电池。具有高效光捕获和卓越的润湿性的QIP的发现提供了提高超薄C-Si / PEDOT的性能的新机会：PSS混合太阳能电池以低成本的简单工艺。

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