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首页> 外文期刊>Surface review and letters >SYNTHESIS AND CHARACTERIZATION OF ZnS THIN FILMS PREPARED BY RESISTIVE HEATING TECHNIQUE
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SYNTHESIS AND CHARACTERIZATION OF ZnS THIN FILMS PREPARED BY RESISTIVE HEATING TECHNIQUE

机译:电阻加热技术制备的ZnS薄膜的合成与表征

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In the present work, Zinc Sulphide (ZnS) thin films deposited by resistive heating technique on BK-7 glass substrate. Optical and structural characterizations of ZnS films have been carried out along with the post-deposition annealing at different temperatures. The thickness of the film is monitored by quartz crystal monitor and found to be 500 nm. Fourier transform infrared (FTIR) spectroscopy provides the qualitative analysis of ZnS film before and after annealing at different temperatures. The optical investigation shows that the as-deposited and annealed ZnS film display the high optical transmittance of (64-68%) in the visible/near infrared region. The optical energy gaps of present as-deposited and annealed ZnS film vary in the range of 3.32-3.18 eV with the change in annealing temperature.
机译:在本作工作中,硫化锌(ZnS)薄膜通过电阻加热技术沉积在BK-7玻璃基板上。 已经进行了ZnS膜的光学和结构特征以及在不同温度下的沉积后退火。 通过石英晶监视器监测薄膜的厚度,发现为500nm。 傅里叶变换红外(FTIR)光谱提供在不同温度下退火前后ZnS膜的定性分析。 光学研究表明,沉积和退火的ZnS膜在可见/近红外区域中显示出(64-68%)的高光透射率。 当前沉积的沉积和退火的ZnS膜的光能间隙随着退火温度的变化而在3.32-3.18eV的范围内变化。

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