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首页> 外文期刊>Philosophical Magazine Letters >Electrochemical impedance spectroscopy analysis of ZnO films: the effect of Mg doping
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Electrochemical impedance spectroscopy analysis of ZnO films: the effect of Mg doping

机译：ZnO膜的电化学阻抗光谱分析：MG掺杂的影响

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摘要

Pure and Mg-doped ZnO films have been successfully grown on indium-doped tin oxide (ITO) substrates by simple chemical spray pyrolysis and their crystallographic properties characterised using X-ray diffraction (XRD) measurements in the range . The XRD measurements revealed that all samples have a hexagonal wurtzite crystal structure and a polycrystalline nature. The structural parameters of the samples were evaluated as a function of Mg content. The electrical properties of the films were evaluated using electrochemical impedance spectroscopy measurements. The circuit parameters were obtained by an equivalent circuit model presuming certain corrosion features of the synthesised films. Additionally, open-circuit potentials and the Bode approximation were used to create a correlation between structural changes resulting from Mg content addition and the variation in the corrosion behaviour of the films.
机译：通过简单的化学喷雾热解及其结晶特性在该范围内使用简单的化学喷雾热解及其结晶特性，在掺杂掺杂的氧化锡（ITO）基材上成功地生长了纯和Mg掺杂的ZnO膜。 XRD测量显示，所有样品都具有六边形纯矿晶体结构和多晶性。 将样品的结构参数作为Mg含量的函数进行评估。 使用电化学阻抗光谱测量评估膜的电性能。 通过推测合成膜的某些腐蚀特征的等效电路模型获得电路参数。 另外，使用开路电位和BODE近似来产生由Mg含量加法产生的结构变化与膜的腐蚀行为的变化之间的相关性。

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