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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Carbon-titanium nanostructures: synthesis and characterization
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Carbon-titanium nanostructures: synthesis and characterization

机译：碳 - 钛纳米结构：合成和表征

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摘要

C-Ti multilayer nanostructures were deposed by thermionic vacuum arc technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. On the other hand, in order to obtain C-Ti multilayer structures with variable thickness and different percentages in C and Ti of layers, a 20 nm thick C layer was first deposed on Si substrate and then seven Ti-C layers, each of these having thickness of up to 40 nm were deposed. To perform the successively layers with various thickness were changed the discharge parameters for C and Ti plasma sources to obtain the desirable thickness. By changing of substrate temperature between room temperature and 300 degrees C and on the other hand the bias voltage up to -700 V, different batches of samples were obtained for this study. To characterize properties of as prepared C-Ti multilayer structures were used electron microscopy techniques (TEM, STEM), Raman spectroscopy, RBS techniques and tribological measurements. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity. Using the Wiedemann-Frantz law was calculated the thermal conductivity.
机译：C-TI多层纳米结构由热离子真空电弧技术储存。由约100nm碳基层和七个40nm组成的层可选地，在硅基板上被送出。另一方面，为了获得具有可变厚度的C-Ti多层结构和层中的C和Ti中的不同百分比，首先将20nm厚的C层置于Si衬底上，然后是七个Ti-C层，每一个厚度可达高达40nm。为了执行具有各种厚度的连续层，改变了C和TI等离子体源的放电参数以获得所需的厚度。通过在室温和300摄氏度之间改变基板温度，另一方面，获得高达-700V的偏置电压，获得该研究的不同批次样品。为了表征如制备的C-TI多层结构的性质，使用电子显微镜技术（TEM，茎），拉曼光谱，RBS技术和摩擦学测量。为了表征导电性能，已经测量了电动表面电阻与温度，然后是电导率。使用Wiedemann-Frantz Laver计算导热率。

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