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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Implantation profiles and depth distribution of slow positron beam simulated by Geant4 toolkit
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Implantation profiles and depth distribution of slow positron beam simulated by Geant4 toolkit

机译：GEANT4工具包模拟慢正电子束的植入谱和深度分布

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摘要

The positron implantation profiles and depth distribution in metal, semiconductor, and polymer surfaces are simulated using the Monte-Carlo-method-based Geant4 toolkit. As per the slow positron beam technique, the monoenergetic positron beams (in the range from 1 to 35 keV) with 1.5 mm radius is injected into semi-infinite samples in the present work. The implantation profile of 3.1 keV positrons in Fe is in good agreement with the Makhovian profile. The mean depth and depth resolution exhibit a general negative correlation with the material densities and incident position energy, respectively, while the fixed peak energy of backscattered positrons exhibits a net correlation with atomic number Z. Furthermore, the implantation profiles present better z-axis resolution with increasing incident angle, and this effect is more prominent for low-density materials. The results can provide theoretical support for new measurement methods based on the slow positron beam technique, such as segment measurements and micro-beam scanning measurements.
机译：使用基于Monte-Carlo方法的Geant4工具包来模拟金属，半导体和聚合物表面的正电子注入曲线和深度分布。根据慢正电子束技术，在本作工作中，将1.5mm半径的单元质正电束（在1至35keV的范围内）注入半无限样品中。 FE中3.1 keV正向的植入概况与Makhovian型材吻合良好。平均深度和深度分辨率分别表现出与材料密度和入射位置能量的一般负相关，而后散射的正的固定峰值能量与原子序数Z表现出净相关性。此外，植入轮廓呈现出更好的Z轴分辨率随着入射角的增加，这种效果对于低密度材料而言更加突出。结果可以为基于慢朗环梁技术的新测量方法提供理论支持，例如段测量和微光束扫描测量。

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