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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Nanostructured dye films of 4-tricyanovinyl-N,N-diethylaniline (TCVA) for optoelectronic applications: microstructure change and electrical conductivity improvement under UV irradiated effect
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Nanostructured dye films of 4-tricyanovinyl-N,N-diethylaniline (TCVA) for optoelectronic applications: microstructure change and electrical conductivity improvement under UV irradiated effect

机译：用于光电应用的4-三氰基乙烯基-N，N-二乙基苯胺（TCVA）的纳米结构染料薄膜：UV照射效应下的微观结构变化和电导率改善

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This article was committed to synthesizing thin films of 4-tricyanovinyl-N,N-diethylaniline (TCVA) by the thermal evaporation technique. The UV light then irradiated these films for different exposure times. Infrared spectroscopy demonstrated that the evaporation method is a good one to get un-dissociated TCVA films, and these films have excellent radiation stability. The x-ray diffraction pattern at room temperature confirms TCVA films have a nanocrystalline structure. These films are transformed into the amorphous structure after UV irradiation, indicating the increase of the disorder in these films. The optical spectroscopy of TCVA films was recorded before and after irradiation. It was found that the optical band gap decreases from 1.56 to 1.49 eV, and Urbach's energy increases after UV irradiation. The electrical studies showed that the value of electrical conductivity increases and the value of activation energy decreases after UV irradiation.
机译：本文致力于通过热蒸发技术合成4-三氰基维基-N，N-二乙基苯胺（TCVA）的薄膜。 然后将UV光照射这些薄膜以进行不同的曝光时间。 红外光谱证明蒸发方法是未解离TCVA薄膜的良好型薄膜，并且这些薄膜具有优异的辐射稳定性。 室温下的X射线衍射图案确认TCVA膜具有纳米晶体结构。 在紫外线照射后，将这些薄膜转化为无定形结构，表明这些薄膜中的病症的增加。 在照射之前和之后记录TCVA膜的光学光谱。 发现光带隙从1.56降至1.49eV，UV照射后Urbach的能量增加。 电气研究表明，电导率的值增加，紫外线照射后激活能量的值降低。

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