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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure
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Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure

机译：γ射线辐射对Al / C24H12 / P-Si纳米结构电特性的影响

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摘要

We have investigated the effects of Co-60 gamma-ray irradiation on the electrical properties of an Al/C24H12/p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series resistance (R-s), ideality factor (n) and barrier height (Phi(B)). The samples have been prepared using an evaporation technique and irradiated with a total dose range of 0-90 kGy at room temperature. Current-voltage (I-V) measurements have been performed before and after irradiation in the dark and at room temperature. It has been observed that the barrier height and series resistance values are decreased after irradiation while ideality factor is increased. Decreasing in R-s indicates that the product of the mobility and the free carrier concentration has increased due to the radiation defects. Experimental results show that this material can be modified using Co-60 gamma-ray irradiation.
机译：我们研究了CO-60γ射线照射对Al / C24H12 / P-Si金属 - 聚合物 - 聚合物半导体（MPS）肖特基二极管的电性能的影响，例如串联电阻（RS），理想因子（N）和 屏障高度（phi（b））。 使用蒸发技术制备样品，并在室温下用总剂量范围为0-90 kgy的辐射。 在黑暗和室温下照射之前和之后进行电流电压（I-V）测量。 已经观察到，屏障高度和串联电阻值在照射后减小，而理想因子增加。 R-S中的减小表明，由于辐射缺陷，迁移率和自由载体浓度的乘积增加。 实验结果表明，该材料可以使用CO-60γ射线照射来修饰。

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