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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Novel attributes of bandstructure effect on the performance of germanium Schottky barrier MOSFET
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Novel attributes of bandstructure effect on the performance of germanium Schottky barrier MOSFET

机译：乐队结构对锗肖特基屏障MOSFET性能的新颖属性

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摘要

A detailed study of the bandstructure effect on the performance of a double-gate germanium Schottky barrier MOSFET (Ge-SBFET) is investigated. An accurate calculation of the thickness-dependent 2D bandstructure is employed within a 20 orbital sp(3)d(5)s(*) tight-binding formalism, and the quantum transport of the carriers is elucidated based on the non-equilibrium Green's function formalism. Quantum confinement considerably changes the bandstructure profile of the Ge-SBFET and causes the energy difference of the |Gamma - L| valleys to rearrange. For a channel thickness of about 1.5 nm, the two-fold X-2 type valleys with major axes at the Gamma point form a subband with minimum energy, and the |Gamma - L| energy split is reduced to 13 meV, which compensates for the lack of density of states in the nanoscale regime. Moreover, the strong transverse confinement of the ultra-thin body Ge-SBFET increases the effective Schottky barrier height and a parabolic potential profile with discrete resonant states is formed along the current transport direction, mainly at low drain voltages. Resonant tunnelling creates oscillations in the transfer characteristic, especially at low temperatures and at a reduced value of drain voltages. The impact of the physical and structural parameters, which may affect the resonant tunnelling in a Ge-SBFET, is thoroughly analysed. The results in this paper pave the way towards elucidating the applications of nanoscale Ge-SBFETs.
机译：研究了对双栅锗肖特基屏障MOSFET（GE-SBFET）性能的带结构效应的详细研究。在20个轨道SP（3）D（5）S（*）紧密结合的形式主义内采用精确计算厚度依赖性2D带结构，并且基于非平衡绿色的功能阐明载体的量子传输形式主义。量子限制显着改变了Ge-SBFET的带状结构轮廓，并导致|γ - L |的能量差山谷重新排列。对于约1.5nm的沟道厚度，γ点处具有主轴的双倍X-2型谷，形成具有最小能量的子带，而且|γ - L |能量分裂减少到13 meV，这补偿了纳米级政题中缺乏状态的密度。此外，超薄体Ge-SBFET的强横向限制增加了沿着电流传送方向形成了具有离散谐振状态的有效肖特基势垒高度，并且主要处于电流传送方向，主要处于低排水电压。谐振隧道在转移特性中产生振荡，尤其是在低温下和降低的排水电压值。物理和结构参数的影响，可以彻底分析了GE-SBFET中的谐振隧道的影响。本文的结果为阐明了纳米级Ge-SBFET的应用铺平了道路。

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