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首页> 外文期刊>Physics of atomic nuclei >Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays
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Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

机译:CDHGTE半导体在暴露于软X射线时的非热机理

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摘要

The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.
机译:研究了通过配备有X射线浓缩器的激光等离子体源产生的软X射线对CDHGTE半导体的性能产生的软X射线的影响。 为此目的,测量材料的近表面层中原子的质量浓度。 证明软X射线辐射的作用导致通过非热机理在表面处的固溶体组合物改变并产生表面缺陷。

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