Theoretical Approach to Energy Resolution of Semiconductor Detectors

Samedov V. V.

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Theoretical Approach to Energy Resolution of Semiconductor Detectors

机译：半导体检测器能量分辨的理论方法

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摘要

All processes occurring in semiconductor detectors during detection of primary monoenergetic particles lead to broadening of spectral lines. In this work, a general expression for the energy resolution of semiconductor detectors is obtained using the theory of branching cascade processes. It is shown that the general formula involves all contributions to the spectral line broadening described in the literature and additional contributions associated with fluctuations of electron and hole lifetimes caused by inhomogeneity of traps in the semiconductor material and fluctuations of the electronic channel gain.

机译：在检测初级单体颗粒期间半导体检测器中发生的所有过程导致光谱线的扩展。在这项工作中，使用分支级联工艺理论获得半导体检测器的能量分辨率的一般表达。结果表明，通式涉及对文献中描述的频谱线宽的所有贡献以及与由陷阱中的陷阱中的疏松性引起的电子和孔寿命的波动相关联的额外贡献以及电子通道增益的波动。

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来源
《Physics of atomic nuclei》 |2017年第9期|共6页
作者
Samedov V. V.;
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作者单位

Natl Res Nucl Univ MEPhI Moscow Engn Phys Inst Kashirskoe Sh 31 Moscow 115409 Russia;

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原文格式 PDF
正文语种 eng
中图分类原子物理学;原子核物理学、高能物理学;
关键词
semiconductor detector; energy resolution; charge induction; electron capture by traps;

机译：半导体探测器;能量分辨率;充电诱导;通过陷阱捕获电子捕获;

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专利

1. Theoretical Approach to Energy Resolution of Semiconductor Detectors [J] . Samedov V. V. Physics of atomic nuclei . 2017,第9期

机译：半导体检测器能量分辨的理论方法
2. SIRIO: A High-Speed CMOS Charge-Sensitive Amplifier for High-Energy-Resolution X-γ Ray Spectroscopy With Semiconductor Detectors [J] . Mele Filippo, Gandola Massimo, Bertuccio Giuseppe IEEE Transactions on Nuclear Science . 2021,第3期

机译：Sirio：具有半导体检测器的高能分辨率X-γ光谱谱的高速CMOS充电放大器
3. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage [J] . Samedov V. V. Physics of atomic nuclei . 2017,第11期

机译：半球形半导体检测器能量分辨率对偏置电压的依赖性
4. Theoretical Approach to the Energy Resolution of Semiconductor Detectors [C] . Victor V. Samedov IEEE Nuclear Science Symposium . 2016

机译：半导体检测器能量分辨的理论方法
5. THEORETICAL STUDIES OF HIGH ENERGY TRANSPORT OF ELECTRONS AND HOLES IN GALLIUM-ARSENIDE, INDIUM-PHOSPHIDE, INDIUM-ARSENIDE, AND GALLIUM-ANTIMONIDE (SEMICONDUCTORS, MONTE CARLO, IMPACT IONIZATION). [D] . BRENNAN, KEVIN FRANCIS. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓（半导体，蒙特卡罗，碰撞电离）中电子和空穴的高能输运的理论研究。
6. The semiconductor diode detector response as a function of field size and beam angle of high-energy photons [O] . Tomasz Koper, Anna Kowalik, Sebastian Adamczyk 2017

机译：半导体二极管检测器响应与高能光子的场大小和束角的关系
7. Energy resolution and throughput of a new real timeuddigital pulse processing system for x-ray andudgamma ray semiconductor detectors [O] . Abbene L, Gerardi G, Raso G, 2013

机译：新的实时能量分辨率和吞吐量 ud用于X射线和 ud的数字脉冲处理系统伽马射线半导体探测器
8. Charge Trapping in Semiconductor Detectors; A Theoretical Approach [R] . J. M. Blair, T. A. McMath 1970

机译：半导体探测器中的电荷陷阱;理论方法

Theoretical Approach to Energy Resolution of Semiconductor Detectors

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