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Microscopic theory of electron absorption by plasma-facing surfaces

机译:基于等离子体表面的电子吸收显微镜理论

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摘要

We describe a method for calculating the probability with which the wall of a plasma absorbs an electron at low energy. The method, based on an invariant embedding principle, expresses the electron absorption probability as the probability for transmission through the wall's long-range surface potential times the probability to stay inside the wall despite of internal backscattering. To illustrate the approach we apply it to a SiO2 surface. Besides emission of optical phonons inside the wall we take elastic scattering at imperfections of the plasma-wall interface into account and obtain absorption probabilities significantly less than unity in accordance with available electron-beam scattering data but in disagreement with the widely used perfect absorber model.
机译:我们描述了一种计算在低能量下吸收电子的壁的概率的方法。 该方法基于不变的嵌入原理,表达了电子吸收概率作为通过墙体的远程表面潜在倍率传输的概率,尽管存在内部背散,但是尽管存在内部背散。 为了说明我们将其应用于SiO2表面的方法。 除了墙壁内的光学声子的发射之外,我们考虑到等离子体壁界面的缺陷时的弹性散射,并根据可用的电子束散射数据获得吸收概率明显小于统一,但与广泛使用的完美吸收模型分解。

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