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首页> 外文期刊>Polymers for advanced technologies >Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature
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Controlling the electrical characteristics of Au/n-Si structure with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature

机译：用（Biphyl-COPC）和（OHSUBS-ZNPC）界面在室温下控制Au / n-Si结构的电特性

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摘要

In order to interpret well whether or not the organic or polymer interfacial layer is effective on performance of the conventional Au/n-Si (metal semiconductor [MS]) type Schottky barrier diodes (SBDs), in respect to ideality factor (n), leakage current, rectifying rate (RR), series and shunt resistances (R-s, R-sh) and surface states (N-ss) at room temperature, both Au/biphenyl-CoPc/n-Si (MPS1) and Au/OHSubs-ZnPc/n-Si (MPS2) type SBDs were fabricated. The electrical characteristics of these devices have been investigated and compared by using forward and reverse bias current-voltage (I-V) characteristics in the voltage range of (-4V)-(4V) for with and without (biphenyl-CoPc) and (OHSubs-ZnPc) interfacial layers at room temperature. The main electrical parameters of these diodes such as reverse saturation current (I-0), ideality factor (n), zero-bias barrier height (phi(B0)), RR, R-s and R-sh were found as 1.14x10(-5)A, 5.8, 0.6eV, 362, 44 and 15.9k for reference sample (MS), 7.05x10(-10)A, 3.8, 0.84eV, 2360, 115 and 270k for MPS1 and 2.16x10(-7)A, 4.8, 0.7eV, 3903, 62 and 242k for MPS2, respectively. It is clear that all of these parameters considerably change by using an organic interfacial layer. The energy density distribution profile of N-ss was found for each sample by taking into account the voltage dependence of effective barrier height (phi(e)) and ideality factor, and they were compared. Experimental results confirmed that the use of biphenyl-CoPc and OHSubs-ZnPc interfacial layer has led to an important increase in the performance of the conventional of MS type SBD. Copyright (c) 2015 John Wiley & Sons, Ltd.
机译：为了解释有机或聚合物界面层是否有效地对常规Au / n-Si（金属半导体[MS]）型肖特基势垒二极管（SBD）的性能有效，相对于理想性因子（n），漏电流，整流速率（RR），串联和分流电阻（RS，R-SH）和室温下的表面状态（N-SS），均为Au / Biphenyl-CopC / N-Si（MPS1）和Au / Ohsubs- ZnPC / N-Si（MPS2）型SBDS制备。通过使用（-4V） - （4V）的电压范围内的正向和反向偏置电流（IV）特性进行研究，比较这些装置的电气特性（4V） - （4V）和（Biphenyl-COPC）和（OHSUB - ZnPC）室温下的界面层。这些二极管的主要电气参数如反向饱和电流（I-0），理想因子（N），零偏压势垒高度（PHI（B0）），RR，RS和R-SH为1.14x10（ - 5）参考样品（MS），7.05x10（-10）A，3.8,0.84EV，2360,115和270K的参考样品（MS），7.05x10（-10），115和270k为MPS1和2.16x10（-7）a分别为MPS2的4.8,0.7ev，3903,62和242k。显然，所有这些参数通过使用有机界面层显着改变。通过考虑有效阻隔高度（PHI（e））和理想因子的电压依赖性，对每个样品发现N-SS的能量密度分布曲线。实验结果证实，使用联苯-COPC和OHSUBS-ZNPC界面层的使用导致了MS型SBD常规性能的重要增加。版权所有（c）2015 John Wiley＆Sons，Ltd。

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