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首页> 外文期刊>The Astrophysical Journal. Supplement Series >Collision and Radiative Rates for Infrared to Extreme Ultraviolet Lines of S III
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Collision and Radiative Rates for Infrared to Extreme Ultraviolet Lines of S III

机译：用于红外线的碰撞和辐射速率S III的极端紫外线

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摘要

Electron excitation collision strengths for a wide range of transitions giving rise to infrared, optical, ultraviolet, and extreme ultraviolet lines of S III have been calculated using the B-spline Breit-Pauli R-matrix method. The term-dependent non-orthogonal orbitals have been employed for the accurate representation of target wave functions and the electron plus S III target scattering system. The multiconfiguration Hartree-Fock method has been utilized for the calculation of 198 S In fine-structure level energies belonging to the 3s(2)3p(2), 3s3p(3), 3p(4), 3s(2)3p3d, 3s(2)3p4s, 4p, 4d, 4f, 3s(2)3p5s, 5p, 5d, 3s(2)3p6s, 3s3p(2)3d, 3s3p(2)4s, 4p, 4d, 4f, and 3s3p(2)5s configurations. The transition probabilities between fine-structure levels have also been calculated and compared with available other calculations. The close-coupling expansion includes these 198 fine-structure levels of S III in the electron collision calculations. The effective collision strengths are calculated at electron temperatures in the range of 10(3)-10(6) K for all possible transitions between the 198 fine-structure levels. The present calculation includes a larger number of levels in the close-coupling expansion and improved target description than previous calculations and should be useful for the analysis of measured spectra from various astrophysical objects. Comparison with other calculations is used to assess likely uncertainties in the existing collision and radiative rates for S III. The collision and radiative rates are estimated to be accurate to about 20% or better for most main transitions of astrophysical importance.
机译：通过B样条素Breit-Pauli R-Matrix方法计算了用于红外线，光学，紫外线和极紫外线的各种过渡的电子激发碰撞强度。术语依赖性非正交轨道已经用于准确表示目标波函数和电子加SIII靶散射系统。已经利用了多组配置Hartree-Fock方法，用于计算属于3S（2）3P（2），3S3P（3），3P（4），3S，3S，3S的3S（2）3P（2），3S3P（3），3S的细结构级能量（2）3p4s，4p，4d，4f，3s（2）3p5s，5p，5d，3s（2）3p6s，3s3p（2）3d，3s3p（2）4s，4p，4d，4f和3s3p（2） 5S配置。还计算了微结构水平之间的过渡概率，并与其他计算进行了比较。紧密耦合膨胀包括电子碰撞计算中的这些198微结构水平的S III。在10（3）-10（6）克的电子温度范围内的电子温度计算有效碰撞强度对于198微结构水平之间的所有可能的过渡。本计算包括近似耦合膨胀的较大级别，并改善了比以前的计算的改善，并且应该用于分析来自各种天体物理物体的测量光谱。与其他计算的比较用于评估S III的现有碰撞和辐射速率的可能性不确定性。估计碰撞和辐射速率估计为大多数主要转变的大约20％或更好，以获得天体物理重要性的大多数趋势。

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