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Mechanical model of single abrasive during chemical mechanical polishing: Molecular dynamics simulation

机译：化学机械抛光过程中单磨料的机械模型：分子动力学模拟

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The loading process among the silicon substrate, silica cluster and polyurethane pad was performed by molecular dynamics simulations. The results showed that the interaction force between the cluster and pad did not change with the working pressure at low load stage due to strong fluidity of pad atoms. But at high load stage, the interaction force would increase with increase of the working pressure owing to the reduction of pad fluidity. These demonstrate that the contact status between the abrasives and pad will change from an elastic contact to plastic contact with increase of working pressure for a chemical mechanical polishing (CMP) process. Finally, a unified mechanical model for the single abrasive during CMP under different loads was established.
机译：通过分子动力学模拟进行硅衬底，二氧化硅簇和聚氨酯垫中的加载过程。 结果表明，由于垫原子的强流动性，簇和垫之间的相互作用在低负载阶段的工作压力下没有改变。 但是在高负荷阶段，由于垫流动性的降低，相互作用力将随着工作压力的增加而增加。 这些表明，磨料和垫之间的接触状态将从弹性接触改变为塑性接触，与化学机械抛光（CMP）工艺的工作压力的增加。 最后，建立了在不同载荷下CMP期间的单个研磨机的统一机械模型。

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