A K-Band Low-Noise and High-Gain Down-Conversion Active Mixer Using 0.18-m CMOS Technology

Chen Jun-Da; Wang Wen-jun

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A K-Band Low-Noise and High-Gain Down-Conversion Active Mixer Using 0.18-m CMOS Technology

机译：使用0.18-M CMOS技术的K波段低噪声和高增益下转换有源混频器

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This paper fabricates a K-Band 24GHz high-gain, low-power down-conversion mixer using a standard TSMC 0.18-m CMOS technology. The architecture that is used is based on that of a Gilbert cell mixer. Transformer coupling technology is used at the node between the transconductance stage and the local oscillator switches stage. The conversion gain, the noise figure and the size of the chip area performance are significantly better, so this mixer with specific RF parameters gives excellent performance. The simulation (post-sim) results for the proposed mixer show a 15-19dB power conversion gain, a -8.3dBm input third-order intercept point (IIP3) at 24GHz, a 10-12.3dB signal side band (SSB) noise figure and an RF bandwidth of 20-26GHz. The core power consumption for the mixer is 3.096mW and the output buffer power consumption is 3.122mW. The total dc power consumption for this mixer, including the output buffers, is 6.22mW. The total chip size for the K-Band mixer is 0.95x1.14mm(2).

机译：本文使用标准TSMC 0.18-M CMOS技术制造K频段24GHz高增益，低功耗下转换混频器。使用的架构基于Gilbert Cell混频器的架构。变压器耦合技术在跨导级和本地振荡器开关级之间的节点处使用。芯片面积性能的转换增益，噪声系数和尺寸明显更好，因此具有特定RF参数的混频器具有出色的性能。所提出的混合器的仿真（后SIM）结果显示了15-19dB的电源转换增益，24GHz的-8.3dBm输入三阶截取点（IIP3），一个10-12.3db信号侧频（SSB）噪声系数还有20-26GHz的RF带宽。混频器的核心功耗为3.096MW，输出缓冲器功耗为3.122MW。该混频器的DC功耗总计，包括输出缓冲器，为6.22mW。 K波段混合器的总芯片尺寸为0.95x1.14mm（2）。

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来源
《Wireless personal communications: An Internaional Journal》 |2019年第1期|共15页
作者
Chen Jun-Da; Wang Wen-jun;
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作者单位

Natl Quemoy Univ Dept Elect Engn Univ Rd 1 Jinning Township 892 Kinmen Taiwan;

Natl Quemoy Univ Dept Elect Engn Univ Rd 1 Jinning Township 892 Kinmen Taiwan;

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原文格式 PDF
正文语种 eng
中图分类无线通信;
关键词
K-Band; CMOS; Gilber cell mixers; Low noise figure; IIP3;

机译：K波段;CMOS;GILBER细胞混合器;低噪声图;IIP3;

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专利

1. A K-Band Low-Noise and High-Gain Down-Conversion Active Mixer Using 0.18-m CMOS Technology [J] . Chen Jun-Da, Wang Wen-jun Wireless personal communications: An Internaional Journal . 2019,第1期

机译：使用0.18-M CMOS技术的K波段低噪声和高增益下转换有源混频器
2. A K-Band High-Gain Down-Conversion Mixer in 0.18 $mu$m CMOS Technology [J] . Ahn D., Kim D.-W., Hong S. Microwave and Wireless Components Letters, IEEE . 2009,第4期

机译：采用0.18 $ mu $ m CMOS技术的K波段高增益下变频混频器
3. A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-mu m SiGe Bi-CMOS Technology [J] . Chen Jun-Da, Wang Song-Hao Journal of circuits, systems and computers . 2017,第9期

机译：采用0.35微米SiGe Bi-CMOS技术的低功耗，高增益，低噪声802.11a下变频混频器
4. A 5.15–5.825 GHz high-gain and low-noise CMOS down-conversion mixer with low-power for WLAN 802.11a [C] . Dai Yu-Hsiu, Jou Christina F. IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications . 2013

机译：具有低功耗的5.15–5.825 GHz高增益和低噪声CMOS下变频混频器，用于WLAN 802.11a
5. Analysis techniques and modeling for noise and distortion of CMOS down-conversion mixers. [D] . Kim, Jeonghoon. 2004

机译：CMOS下变频混频器的噪声和失真分析技术和建模。
6. A Four-Channel Low-Noise Readout IC for Air Flow Measurement Using Hot Wire Anemometer in 0.18 μm CMOS Technology [O] . Kyeongsik Nam, Hyungseup Kim, Yongsu Kwon, 2021

机译：一种四通道低噪声读出IC用于空气流量测量使用热线风速计在0.18μmCMOS技术中
7. Erratum to: Folded down-conversion mixer for a 60 GHz receiver architecture in 65-nm CMOS technology [O] . Najam Muhammad Amin, Zhi-gong Wang, Zhi-qun Li 2015

机译：错误：在65-NM CMOS技术中折叠卸下式混频器，为60 GHz接收器架构

A K-Band Low-Noise and High-Gain Down-Conversion Active Mixer Using 0.18-m CMOS Technology

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