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首页> 外文期刊>Trends in Ecology & Evolution >Criteria for Using Antiparallel SiC SBDs With SiC MOSFETs for SiC-Based Inverters
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Criteria for Using Antiparallel SiC SBDs With SiC MOSFETs for SiC-Based Inverters

机译：使用反平行SIC SBD与SIC MOSFET的标准用于SIC基逆变器

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摘要

The paper confirms that removing antiparallel silicon carbide (SiC) Schottky barrier diodes (SBDs) from SiC-based inverters offers positive effects without critical impact on inverter loss and electromagnetic interference (EMI) issues, moreover, the removal of SBDs reduces the inverter losses in many cases and noise emissions. This conclusion leads to the possibility to improve the power densities by removing SBDs. However, the removal of SBDs may cause some disadvantages such as an increase of the reverse conduction loss and influence of the body diode recovery phenomenon. Therefore, a comprehensive investigation of these advantages and disadvantages is necessary. In this paper, design criteria are proposed to clarify the conditions in which SiC-based inverters without SBDs have advantages over those with SBDs from the viewpoint of losses. On the other hand, to achieve the removal of SBDs, it is also necessary to confirm that removing SBDs does not cause severe EMI issues. The paper confirms that switching noises are reduced by the removal of SBDs; this is due to the larger damping effect of the SiC MOSFETs without SBDs than that of SiC MOSFETs with SBDs. The validity of the theoretical analyses and design criteria is confirmed with comprehensive experimental results.
机译：本文证实，从基于SiC的逆变器移除反平行碳化硅（SIC）肖特基势垒二极管（SBD）对变频器损失和电磁干扰（EMI）问题的影响而没有对逆变器损失的影响而产生积极影响，而且，SBD的去除会降低逆变器损失许多情况和噪音排放。该结论导致通过去除SBD来改善电力密度。然而，SYBD的去除可能导致一些缺点，例如增加逆转导电损失和体二极管恢复现象的影响。因此，需要全面调查这些优点和缺点。在本文中，提出了设计标准，以阐明没有SBD的基于SiC的逆变器的条件，从损失的观点来看，没有SBD的优点是具有SBD的那些。另一方面，为了达到删除SBD，还有必要确认删除SBD不会导致严重的EMI问题。本文证实，通过去除SBD来减少开关噪声;这是由于SiC MOSFET的阻尼效果较大而不是具有SBD的SiC MOSFET的损害效果。通过综合实验结果证实了理论分析和设计标准的有效性。

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