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首页> 外文期刊>Journal of electroceramics >Microstructures and dielectric properties of sol-gel prepared K-doped CaCu3Ti4O12 ceramics
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Microstructures and dielectric properties of sol-gel prepared K-doped CaCu3Ti4O12 ceramics

机译：溶胶 - 凝胶制备的K掺杂CaCu3Ti4O12陶瓷的微结构和介电性能

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摘要

K+ doped CaCu3Ti4O12 ceramics were prepared by the sol-gel method and sintered at different temperatures from 1040 A degrees C to 1100 A degrees C. The microstructures and various dielectric properties of Ca1-xKxCu3Ti4O12-delta ceramics were investigated. Results of XRD indicate that the Ca1-xKxCu3Ti4O12-delta samples exhibit a typical cubic structure. The grain size as well as the dielectric permittivity (epsilon') increase obviously with the increasing sintering temperature. The dielectric permittivity and dielectric loss (tan delta) measurements show strong frequency dependence in all the samples. A epsilon' value of about 2.3 x 10(4) and a low tan delta value of about 0.039 were observed at room temperature and 1 kHz in the Ca0.99K0.01Cu3Ti4O12-delta (CKCTO) ceramics sintered at 1060 A degrees C for 8 h, showing better dielectric properties than pure CCTO. Dielectric relaxations were observed in epsilon'/tan delta-T curves which may be related to the IBLC effect.
机译：通过溶胶 - 凝胶法制备K +掺杂的CaCu3Ti4O12陶瓷，并在1040℃至1100℃的不同温度下烧结。研究了Ca1-XKXCu3Ti4O12-Delta陶瓷的微观结构和各种介电性能。 XRD的结果表明CA1-XKXCU3TI4O12-DELTA样品表现出典型的立方结构。 随着烧结温度的增加，晶粒尺寸以及介电介电常数（ε）显着增加。 介电介电常数和介电损耗（TAN DELTA）测量显示出所有样品中的强频率依赖性。 在室温下观察到约2.3×10（4）的ε值为约2.3×10（4）和低TaNδ值，在Ca0.99k0.01cu3ti4o12-delta（Ckcto）陶瓷中1kHz在1060℃下烧结8 H，显示比纯CCTO更好的介电性质。 在epsilon'/ tan delta-t曲线中观察到介电松弛，其可能与IBLC效应有关。

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  • 来源
    《Journal of electroceramics》 |2018年第2期|共7页
  • 作者

    Wang Zhenduo; Guo Jianqin; Hao Wentao; Cao Ensi; Zhang Yongjia; Sun Li; Xu Panpan;

  • 作者单位

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Phys &

    Optoelect Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Coll Mat Sci &

    Engn Taiyuan 030024 Shanxi Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电工陶瓷材料;
  • 关键词

    A.CaCu3Ti4O12; D.Dielectric properties; E.Sol-gel method;

    机译：A.CACU3TI4O12;D.dielectric属性;E.Sol-Gel方法;

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