Investigation of HEMT and MESFET with Notch in Side of Drain

Farshid Kargosha; Z. Kordrostami

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Investigation of HEMT and MESFET with Notch in Side of Drain

机译：排水侧面缺口腹部和MESFET的研究

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In this study, we investigate the requirement of high electron mobility field-effect transistors with hetero-structure and evaluate its performance at the high-frequency circuits. Needs, benefits and so computing the transistor are fully described. High electron mobility transistors are divided into three groups: pHEMT, mHEMT and induced HEMT. Quantum mechanism of electron in the channel and potential wells provides the most traits for high frequency transistors. Through drift-diffusion simulation shows that gate with small notch in side of the drain, can improve drain current and cutoff frequency. This indicates that without changing the gate length, capacitor of gate-source can be reduced.

机译：在这项研究中，我们研究了具有异质结构的高电子移动场效应晶体管的要求，并评估其在高频电路的性能。完全描述了计算晶体管的需求，益处等。高电子迁移率晶体管分为三组：PHEMT，MHEMT和诱导的HEMT。通道和潜在孔中电子的量子机制为高频晶体管提供了最多的性状。通过漂移扩散仿真显示，漏极侧的小凹口的闸门可以提高漏极电流和截止频率。这表明可以在不改变栅极长度的情况下，可以减小门源的电容器。

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来源
《Journal of Engineering & Applied Sciences》 |2016年第4期|共5页
作者
Farshid Kargosha; Z. Kordrostami;
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作者单位

Department of Electrical Engineering Islamic Azad University;

Department of Electrical Engineering Shiraz University of Technology;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Quantum Well FETs (QWFETs); High Electron Mobility Transistor (HEMT); Quantum well; Two Dimensional Electron Gas (2DEG); Drift;

机译：量子孔FET（QWFET）;高电子迁移率晶体管（HEMT）;量子阱;二维电子气体（2deg）;漂移;

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专利

1. Light Effect in Photoionization of Traps in GaN MESFETs [J] . Hadi Arabshahi, A. Binesh 中国电子科技：英文版 . 2010,第001期
2. Investigation of HEMT and MESFET with Notch in Side of Drain [J] . Farshid Kargosha, Z. Kordrostami Journal of Engineering & Applied Sciences . 2016,第4期

机译：排水侧面缺口腹部和MESFET的研究
3. An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs [J] . Weiss M.R., Pavlidis D. IEEE Transactions on Electron Devices . 1988,第8期

机译：对HEMT和MESFET的功率特性和饱和机制的研究
4. Comparison of photoresponsive drain conduction and gate leakage in n-channel pseudomorphic HEMT and MESFET under electro-optical stimulations [J] . Kim D.M., Kim H.J. IEEE Electron Device Letters . 2000,第6期

机译：电光刺激下n沟道假晶HEMT和MESFET中光响应漏极导通和栅极泄漏的比较
5. Analysis of Drain Lag and Current Slump in GaN-Based HEMTs and MESFETs [C] . Nakajima A., Takayanagi H., Itagaki K., International Symposium on Signals, Systems and Electronics . 2007

机译：基于GaN的血管和MESFET的排水滞后和电流坍落度分析
6. Scrambling with multigate MESFETs and HEMTs. [D] . Somisetty, Shivarajiv K. 2003

机译：用多栅极MESFET和HEMT进行加扰。
7. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage [O] . Yachao Zhang, Yifan Li, Jia Wang, 2020

机译：具有改善的漏极电流密度和高击穿电压的高性能AlGaN双通道HEMT
8. Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F [O] . Edited S. Selberherr, E. Strasser September, A. Asenov, 2015

机译：凹陷门mEsFET和HEmT的有限元模拟：模拟器H2F

Investigation of HEMT and MESFET with Notch in Side of Drain

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