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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Quantum Isotope Effect in Silicon at Low Temperatures
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Quantum Isotope Effect in Silicon at Low Temperatures

机译:低温硅的量子同位素效应

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High-precision studies of Raman scattering in isotopically pure Si-28, Si-29, Si-30 single crystals have been performed in the temperature range from 8 to 300 K. It has been found that a difference of about (0.4 +/- 0.1) cm(-1) observed at temperatures T 100 K between the normalized Raman frequencies of the Si-28 and Si-30 isotopes measured with an accuracy of 0.1 cm(-1) is certainly due to quantum effects damping with increasing temperature. The possibility of observing quantum isotope effects in germanium has been estimated using experimental data on isotope effects in diamond and silicon.
机译:在同位素纯Si-28中的拉曼散射的高精度研究已经在8-300k的温度范围内进行了Si-29,Si-30单晶的高精度研究。已发现约为约(0.4 +/- 在用0.1cm(-1)的精度测量的Si-28和Si-30同位素的归一化拉曼频率之间观察到的0.1)cm(-1)在0.1cm(-1)的精度下,当然是由于量子效应阻尼温度。 使用实验数据在金刚石和硅中的同位素效应上估计了观察锗中量子同位素效应的可能性。

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