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首页> 外文期刊>Journal of industrial and engineering chemistry >Control of 1-dimensionally structured tungsten oxide thin films by precursor feed rate modulation in flame vapor deposition
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Control of 1-dimensionally structured tungsten oxide thin films by precursor feed rate modulation in flame vapor deposition

机译:火焰气相沉积中的前体进料速率调节控制1维结构氧化钨薄膜

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摘要

Flame vapor deposition (FVD) process is the fast and effective method to prepare high quality 1-D nanostructured tungsten oxide thin film, which has several advantages in photoelectrochemical (PEC) water splitting such as more sunlight absorption, straight electron path and short diffusion length of electron hole. The precursor concentration in FVD process is the most important process variable to determine the morphology of prepared nanostructures. In this study, the precursor concentration in FVD process was controlled precisely and flexibly by adjusting the tungsten feed rate with the wire feeding device which we developed. Several interesting nanostructures were prepared in FVD process by modulating the precursor concentration with time and the reasonable growth mechanisms for developments of those nanostructures are also proposed. The narrower and longer 1-D tungsten oxide nanostructure could be prepared by controlling the precursor feed rate and deposition time in FVD process, which is desirable for efficient PEC water splitting. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
机译:火焰气相沉积(FVD)方法是制备高质量的1-D纳米结构氧化钨薄膜的快速有效的方法,其在光电化学(PEC)水分裂中具有若干优点,例如阳光吸收,直电子路径和短扩散长度电子孔。 FVD过程中的前体浓度是最重要的方法变量,以确定制备的纳米结构的形态。在这项研究中,通过使用我们开发的导线供给装置调节钨进料速率,精确和灵活地控制FVD过程中的前体浓度。通过调节前体浓度随时间调节前体浓度,并提出了这些纳米结构的显影的合理生长机制的若干有趣的纳米结构。通过控制FVD工艺中的前体进料速率和沉积时间,可以制备较窄和更长的1-D钨纳米结构,这对于有效的PEC水分裂是期望的。 (c)2019年韩国工程化学学会。 elsevier b.v出版。保留所有权利。

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