Circuit Sensing Techniques in Magnetoresistive Random-Access Memory

Wu Bing-Chen; Liu Tsung-Te

首页> 外文期刊>Journal of Low Power Electronics >Circuit Sensing Techniques in Magnetoresistive Random-Access Memory

【24h】

Circuit Sensing Techniques in Magnetoresistive Random-Access Memory

机译：磁阻随机存取存储器中的电路传感技术

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we review circuit techniques for read performance enhancement of magnetic random-access memories (MRAMs) that are based on magnetic tunnel junction (MTJ) devices with spin transfer torque (STT) switching mechanism for normally-off and nonvolatile computing. First, a briefdiscussion of the construction and operation of STT-MRAM, and the mechanism of operation of STT-MTJ devices is presented. Circuit sensing techniques are then introduced and divided into two categories—current mode and voltage mode—according to their sensing scheme. These techniquesare described in detail with comprehensive case studies from literature, followed by a thorough comparison and discussion of their respective design space.

机译：在本文中，我们审查了基于磁隧道结（MRAM）的读取性能增强的电路技术，其基于磁隧道结（MTJ）器件，用于常关和非易失性计算的旋转传递扭矩（STT）切换机构。首先，提出了STT-MRAM的构造和操作的简短讨论，以及STT-MTJ器件的操作机制。然后引入电路传感技术并根据其感测方案划分为两类电流模式和电压模式。这些技术详细描述了来自文献的综合案例研究，其次是对其各自的设计空间进行了彻底的比较和讨论。

著录项

来源
《Journal of Low Power Electronics》 |2018年第2期|共11页
作者
Wu Bing-Chen; Liu Tsung-Te;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
EMBEDDED NONVOLATILE MEMORY (ENVM); LOW-POWER MEMORY CIRCUIT; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); NONVOLATILE COMPUTING; SPIN TRANSFER TORQUE (STT); SPINTRONICS;

机译：嵌入式非易失性存储器（envm）;低功耗存储电路;磁随机存取存储器（MRAM）;磁隧道结（MTJ）;非易失性计算;旋转转移扭矩（STT）;闪蒸;

相似文献

外文文献
中文文献
专利

1. Circuit Sensing Techniques in Magnetoresistive Random-Access Memory [J] . Wu Bing-Chen, Liu Tsung-Te Journal of Low Power Electronics . 2018,第2期

机译：磁阻随机存取存储器中的电路传感技术
2. Materials for spin-transfer-torque magnetoresistive random-access memory [J] . Yuasa Shinji, Hono Kazuhiro, Hu Guohan, MRS bulletin . 2018,第5期

机译：自旋转移转矩磁阻随机存取存储器的材料
3. Total ionizing dose and synergistic effects of magnetoresistive random-access memory [J] . Xing-Yao Zhang, Qi Guo, Yu-Dong Li, 核技术（英文版） . 2018,第008期

机译：总电离剂量和磁阻随机存取存储器的协同效应
4. Use of Magnetoresistive Random-Access Memory as Approximate Memory for Training Neural Networks [C] . Nicolas Locatelli, Adrien F. Vincent, Damien Querlioz IEEE International Conference on Electronics, Circuits and Systems . 2018

机译：使用磁阻随机存取存储器作为训练神经网络的近似存储器
5. Circuit and system design for magnetoresistive digital memory and cache. [D] . Xu, Wei. 2009

机译：磁阻数字存储器和高速缓存的电路和系统设计。
6. Reversible Downregulation of Protein Kinase A during Olfactory Learning Using Antisense Technique Impairs Long-Term Memory Formation in the Honeybee Apis mellifera [O] . André Fiala, Uli Müller, Randolf Menzel 1999

机译：使用反义技术在嗅觉学习过程中蛋白激酶A的可逆下调会损害蜜蜂Apis mellifera的长期记忆形成
7. Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory [O] . Hiroshi Imamura, Rie Matsumoto 2019

机译：旋转转移扭矩对基于电压 - 扭矩的磁阻随机存取存储器的写入错误率的影响

Circuit Sensing Techniques in Magnetoresistive Random-Access Memory

摘要

著录项

相似文献

相关主题

期刊订阅