A Compact Drain Current and Threshold Voltage Quantum Mechanical Analytical Modeling for FinFETs

Balwinder Raj; A. K. Saxena; S. Dasgupta

首页> 外文期刊>Journal of Nanoelectronics and Optoelectronics >A Compact Drain Current and Threshold Voltage Quantum Mechanical Analytical Modeling for FinFETs

【24h】

A Compact Drain Current and Threshold Voltage Quantum Mechanical Analytical Modeling for FinFETs

机译：小型漏极电流和阈值电压量子机械分析模拟FinFET

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, drain current and threshold voltage analytical quantum mechanical (QM) modeling of a FinFET structure is presented. The quantum inversion charge is also evaluated for the above device. The results obtained on the basis of our model, are compared and contrasted with reported classical and experimental results for the purpose of validation of our model. A close match was founded thereby validating our proposed QM analytical model.

机译：本文介绍了漏极电流和阈值电压分析量子机械（QM）模型的FinFET结构。还评估了上述装置的量子反转电荷。比较了我们模型获得的结果，与报告的经典和实验结果对比，以验证我们的模型。建立了一个近距离匹配，从而验证了我们提出的QM分析模型。

著录项

来源
《Journal of Nanoelectronics and Optoelectronics》 |2008年第2期|共8页
作者
Balwinder Raj; A. K. Saxena; S. Dasgupta;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Quasi Planar Double-Gate FinFET; Classical and Quantum Mechanical Analytical Modeling; Simulation; Short-Channel Effects; Ultra Thin Channel;

机译：准平面双栅极FinFET;古典和量子机械分析模拟;模拟;短信效应;超薄通道;

相似文献

外文文献
中文文献
专利

1. A Compact Drain Current and Threshold Voltage Quantum Mechanical Analytical Modeling for FinFETs [J] . Balwinder Raj, A. K. Saxena, S. Dasgupta Journal of Nanoelectronics and Optoelectronics . 2008,第2期

机译：小型漏极电流和阈值电压量子机械分析模拟FinFET
2. Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET) [J] . Saha Rajesh, Bhowmick Brinda, Baishya Srimanta ECS Journal of Solid State Science and Technology . 2018,第2期

机译：改性双级FINFET中反转电荷和阈值电压的量子分析建模（BL-FINFET）
3. Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET [J] . Das Rajashree, Baishya Srimanta Microelectronics journal . 2018,第MAY期

机译：栅漏重叠FinFET中的表面电势和阈值电压的分析模型
4. Quantum Mechanical Analytical Drain Current Modeling and Simulation for Double Gate FinFET Device Using Quasi Fermi Potential Approach [C] . Balwinder Raj, A.K. Saxena, S. Dasgupta International Conference on Soft Computing for Problem Solving . 2012

机译：使用准fermi潜在方法的双栅FinFET装置量子机械分析漏极电流建模与仿真
5. Modeling the current-voltage (I-V) characteristics of the MOSFET device with quantum mechanical effects due to thin oxide near silicon/silicon dioxide interface using asymptotic methods. [D] . Abebe, Henok. 2002

机译：使用渐近方法，利用靠近硅/二氧化硅界面的薄氧化物，利用量子力学效应对MOSFET器件的电流-电压（I-V）特性进行建模。
6. Reducing Amplified Spontaneous Emission Threshold in CsPbBr3 Quantum Dot Films by Controlling TiO2 Compact Layer [O] . Saif M. H. Qaid, Fahhad H. Alharbi, Idriss Bedja, 2020

机译：通过控制TiO2紧凑层减少CSPBBR3量子点薄膜中的扩增自发发射阈值
7. Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects [O] . Siew Kang Eng, Heong Yau Wei, Anwar Sohail, 2012

机译：包含量子力学效应的纳米级应变Si / Si1-xGex MOSFET的二维分析阈值电压模型

A Compact Drain Current and Threshold Voltage Quantum Mechanical Analytical Modeling for FinFETs

摘要

著录项

相似文献

相关主题

期刊订阅