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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation
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Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation

机译：MEV离子束照射铅卤化铅钙矿单晶的光致发光和高精度图案化

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摘要

Focused ion beam (FIB) has recently been used to tune the optical properties of lead halide perovskites (LHPs), opening an interesting avenue for applications in optoelectronic devices. However, it has remained an open question to date whether FIB can be used to locally enhance the photoluminescence (PL) of LHPs. In this work we irradiate MAPbBr(3)(MA = methylammonium) single crystals with a high energy micron-sized ion probe of different ionic masses (3 MeV He+, 12.5 MeV Br5+, and 20 MeV I7+) and study the PL as a function of the damage induced by the ion beam. We find that at low damage levels the PL is enhanced about six times with respect to the pristine material, while increasing the damage level produces a progressive PL decrease, and, above a threshold, the PL is finally quenched below the value of the pristine crystal. We attribute this behavior to the interaction of free carriers with irradiation induced surface defects: at low damage levels the migration of carriers toward the bulk is inhibitedviatrapping-detrapping events at surface defects, allowing their radiative recombination near the surface; at higher damage, though, the probability for non-radiative recombination increases and gradually becomes dominant. We thus present a method to locally increase the PL of bulk LHP, which could be applied in a wide range of fields, such as highly sensitive ion beam detection or future optoelectronic device design.
机译：聚焦离子束（FIB）最近用于调谐卤化铅钙玻璃（LHP）的光学性质，在光电器件中打开一个有趣的应用。但是，迄今为止fib是否可用于局部增强LHP的光致发光（PL）的迄今为止，它仍然是一个开放的问题。在这项工作中，我们用不同离子质量的高能量微米尺寸的离子探针（3 meV He +，12.5mev Br5 +和20mev i7 +）来照射Mapbbr（3）（Ma =甲基铵）单晶并作为函数研究PL离子束引起的损伤。我们发现，在低损伤水平下，PL相对于原始材料增强了大约六次，同时增加损伤水平产生逐行的PL减小，并且在阈值之上，最终淬火原始晶体的值下方。我们将这种行为归因于辐照诱导表面缺陷的自由载体的相互作用：在低损伤水平下，载流子朝向散装的迁移是表面缺陷的抑制性脱落事件，允许其辐射重组在表面附近;然而，在较高的损伤处，非辐射重组的概率增加并且逐渐变得占优势。因此，我们提出了一种方法来局部增加散装LHP的PLP，其可以应用于宽范围的领域，例如高灵敏度离子束检测或未来的光电器件设计。

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