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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Simple and rapid cleaning of graphenes with a 'bubble-free' electrochemical treatment
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Simple and rapid cleaning of graphenes with a 'bubble-free' electrochemical treatment

机译：用“无泡沫”电化学处理简单快速地清洁石墨烯

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摘要

We herein report a remarkably simple and fast bubble-free electrochemical (EC) treatment process to clean single-layer graphenes (SLGs) that become unintentionally doped during their transfer process. For the EC-treatment process, linear sweeping voltages with respect to a Ag/AgCl reference electrode are applied to the SLG used as a working electrode within non-faradaic regions in a non-aqueous electrolyte. In the EC treatment, we adjust the sweeping voltage ranges and find that treatment at negative voltages for 10 min induces the desorption of not only the polymer scaffold residue but also the etchant residues remaining on the SLG surface via the Coulombic repulsion mechanism between the residues and the SLG electrode. Accordingly, the EC-treated SLG is de-doped and begins to recover its intrinsic electrical properties, showing a Dirac point energy of approximate to 4.4 eV, a work function of approximate to 4.6 eV, and high carrier mobility levels, comparable to the intrinsic properties of graphene monolayers. This study shows the potential to revolutionise the cleaning technique of residue on SLGs and demonstrates that bubble-free EC-treated SLGs can be used to fabricate reliable and controllable transparent SLGs for advanced graphene-based electronic devices.
机译：我们在此报告了一种显着简单而快速的气泡电化学（EC）处理方法，以清洁在其转移过程中无意中掺杂的单层石墨（SLG）。对于EC处理过程，相对于Ag / AgCl参考电极的线性扫描电压被施加到在非水电解质中的非法纳米区域内使用的SLG。在EC处理中，我们调整扫描电压范围并发现在负电压下处理10分钟，诱导不仅使得聚合物支架残留物的解吸，而且还通过残留物之间的库仑排斥机制保持在SLG表面上的蚀刻剂残基。 SLG电极。因此，EC处理的SLG被脱掺杂并开始恢复其内在电性能，显示近似为4.4eV的DIRAC点能量，近似为4.6eV的工作函数和高载流动性水平，与本质相当石墨烯单层的性质。该研究表明，旋转SLG上残留物的清洁技术的可能性，并证明了无泡的EC处理的SLG可用于制造用于基于先进的石墨烯的电子设备的可靠和可控的透明SLG。

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