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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Interface properties and dopability of an organic semiconductor: TAPP-Br variable as molecule but inert in the condensed phase
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Interface properties and dopability of an organic semiconductor: TAPP-Br variable as molecule but inert in the condensed phase

机译：有机半导体的界面性质和掺杂性：TAPP-BR可变作为分子，但在冷凝相中惰性

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摘要

In situinfrared spectroscopy under ultra-high vacuum conditions reveals the behaviour of an example of a molecular compound, the n-conducting organic semiconductor (2,9-bis-(heptafluoropropyl)-4,7,11,14-tetrabromo-1,3,8,10-tetraazaperopyrene, TAPP-Br), upon condensation on various surfaces and as a mixture with typical dopants. The bending of molecules on Au(111) as previously established by inelastic electron scattering is seen also in infrared spectra of molecules on gold films, but clearly depends on temperature. It is indicated by modified infrared signals from C(3)F(7)sidechain vibrations. If deposited onto MoO3, commonly used as p-dopant and interlayer material in organic electronics, infrared vibrational spectra are similarly modified while MoO(3)deposition onto a preformed condensed layer did not produce any molecular change. Calcium, often used as an n-dopant, leads to further changes of the TAPP-Br vibrations in co-evaporated layers, specifically the modified C-C vibrations on the aromatic rings indicating charge transfer. Upon deposition of TAPP-Br on Ca films, a strong decrease of the metallic absorption of the Ca layer has been observed, which is typical for a chemical interface interaction. In contrast, for Ca deposition onto an already condensed TAPP-Br layer, a pronounced Ca island growth and thus enhanced diffusion and no significant vibrational changes are observed. Thus, chemical doping should be done before the molecules crystallize. Physisorption as well as chemisorption at interfaces strongly depend on the deposition sequence, which should be considered also for other organic semiconductors.
机译：在超高真空条件下的出风光雾谱中，揭示了分子化合物的实例，N导电有机半导体的实例（2,9-双氟丙基）-4,7,11,14-四romo-1,3 ，8,10-四唑吡啶，TAPP-BR），在各种表面上冷凝并用作典型掺杂剂的混合物。在金膜上的分子红外光谱中也可以看到Au（111）上的分子弯曲，但是在金薄膜上的红外光谱中，但显然取决于温度。由来自C（3）F（7）旁边振动的修改红外信号表示。如果沉积在MOO3上，通常用作有机电子器件中的P掺杂剂和层间材料，则红外振动光谱类似地改性，而MOO（3）沉积到预制的稠合层上没有产生任何分子变化。通常用作N掺杂剂的钙导致共蒸发层中TAPP-BR振动的进一步变化，特别是在指示电荷转移的芳环上的改性的C-C振动。在Ca膜上沉积TAPP-BR时，已经观察到CA层的金属吸收的强度降低，这对于化学界面相互作用是典型的。相反，对于Ca沉积到已经凝结的TAPP-BR层上，观察到显着的Ca岛生长，从而增强扩散并且没有显着的振动变化。因此，在分子结晶之前应该进行化学掺杂。在强烈依赖于沉积序列的界面上的理解和化学吸附，也应考虑其他有机半导体。

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