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首页> 外文期刊>Journal of Materials Engineering and Performance >Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750?°C
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Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750?°C

机译：H-BN衬底在超高温度高达1750Ω°C中用H-BN衬底的润湿行为和反应性

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摘要

For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750?°C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650?°C. The contact angle of 90°?±?5° is maintained at temperatures up to 1750?°C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750?°C is mainly controlled by the substrate dissolution/reprecipitation mechanism.
机译：为了成功实施新提出的基于硅基潜热热能储能系统，可以承受与熔融硅的接触加热的适当陶瓷材料，在高于其熔点的温度下需要开发。在这方面，非润湿行为和低反应性是确定陶瓷作为与熔融硅的长期超高温度接触的潜在坩埚材料的适用性的主要标准。在这项工作中，在高达1750℃的温度下首次检测熔融硅的六边形氮化物（H-Bn）的润湿。为此目的，使用静态氩气下与接触加热过程相结合的无柄液滴技术。通过凝固夫妇的SEM / EDS检查评估了所提出的条件下Si / H-BN系统的反应性。结果证明，温度的增加改善了润湿，因此，在约1650℃约为1650℃的情况下发生非润湿性湿润过渡。在高达1750℃的温度下保持90°θ±5°的接触角。由热力学建模支持的结构表征的结果表明，在加热到1750Ω℃的加热和冷却期间Si / H-Bn耦合的润湿行为主要由基板溶解/再沉淀机制控制。

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