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首页> 外文期刊>Journal of Materials Engineering and Performance >Processing and Thermoelectric Properties of TiNiSn Materials: A Review
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Processing and Thermoelectric Properties of TiNiSn Materials: A Review

机译：Tinisn材料的加工和热电性质：综述

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摘要

The half-Heusler alloy TiNiSn is a promising material for high-temperature thermoelectric applications due to its good thermal stability and semiconductor-like electrical properties. Numerous synthesis techniques have been utilized to make TiNiSn, but a comparative study on its thermoelectric properties with respect to processing parameters has not been reported. Based on published experimental data, primary melting methods, such as arc melting or induction levitation melting, do not have a noticeable effect on the final thermoelectric properties, although choice of densification technique and annealing parameters correlate with each thermoelectric property. Thermal conductivity (2.47-6.08 W/m K), governed by lattice scattering effects, was maximized with high density from the spark plasma sintering (SPS) technique as well with low inclusions of metallic impurities and interstitial Ni defects from low-temperature, non-densified processes. Electrical resistivity (4.75-30 mu omega m), inversely related to thermal conductivity, is minimized when density is maximized and chemical defects are favorable from using SPS. All reported TiNiSn alloys contain intermetallic impurities, imparting a global trend of lowered electrical resistivity. Seebeck coefficient (- 273.20 to - 50.71 mu V/K), proportional to electrical resistivity, is maximized when charge carrier concentration is minimized by eliminating phase impurities and Ni defects. Porosity has been observed to scatter low-energy electrons, which can increase Seebeck coefficient and electrical resistivity, although no statistical significance is found. An ideal TiNiSn alloy should have intermediate values of all interconnected thermoelectric properties to maximize ZT. Future research work should strive to include quantitative phase analysis to better characterize the contributions of Ni defects and impurity phases toward thermoelectric properties.
机译：由于其良好的热稳定性和半导体样电性能，半Heusler合金Tinisn是高温热电应用的有希望的材料。已经利用了许多合成技术来制造Tinisn，但尚未报道对其热电性能的比较研究。基于已发表的实验数据，初级熔化方法，例如电弧熔化或感应悬浮熔化，但对最终热电性能没有明显的影响，尽管选择致密化技术和退火参数与每个热电性能相关。由晶格散射效应管辖的导热率（2.47-6.08W / m k）由火花血浆烧结（SPS）技术的高密度最大化，以及低温的金属杂质和间质NI缺陷的低夹杂物。 - 予以致密的过程。电阻率（4.75-30μmomegam）与导热率相反，当密度最大化时，最小化，并且使用SPS有利化学缺陷。所有报道的Tinisn合金含有金属间杂质，赋予电阻率降低的全球趋势。当通过消除相杂质和Ni缺陷最小化电荷载体浓度最小化时，塞贝克系数（ - 273.20至-50.71μmv/ k）最大化，最小化电阻率浓度。已经观察到孔隙率散射低能量电子，这可以提高塞克克系数和电阻率，尽管没有找到统计显着性。理想的Tinisn合金应具有所有互连的热电性能的中间值，以最大化ZT。未来的研究工作应努力包括定量相位分析，以更好地表征Ni缺陷和杂质相对于热电性能的贡献。

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