Synthesis and Characterization of Silicon Nanowires by Electroless Etching

Rabina Bhujel; Umesh Rizal; Amit Agarwal; Bhabani S. Swain; Bibhu P. Swain

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Synthesis and Characterization of Silicon Nanowires by Electroless Etching

机译：无电蚀刻硅纳米线的合成与表征

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Silicon nanowires (SiNWs) were synthesized by two-step electroless etching of p -type Si (100) wafer and characterized by field emission scanning electron microscopy, UV–Vis spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The vibrational signature at 1108 and 2087?cm_(?1)confirmed SiNWs were passivated by both oxygen and hydrogen atoms. Raman peak at 517?cm_(?1)indicated crystalline SiNWs with tailing toward redshift due to Fano effect. The Si(2 p ) and Si(2 s ) core orbital spectra of SiNWs were found at 99.8 and 150.5?eV, respectively. Moreover, the reflection of SiNWs is minimized to?~?1 to 5% in the 650-nm wavelength.

机译：通过P-TYPE Si（100）晶片的两步无电蚀刻合成硅纳米线（SINW），其特征在于通过现场发射扫描电子显微镜，UV-Vis光谱，X射线光电子能谱，傅里叶变换红外光谱和拉曼光谱。在1108和2087的振动签名在1108和2087？cm _（α1）确认的sinws被氧气和氢原子钝化。拉曼峰在517？cm _（α1）指示由于Fano效应而导致拖曳的晶体Sinws。 SINWS的Si（2 p）和Si（2 s）核心轨道光谱分别在99.8和150.5？EV中发现。此外，SINWS的反射最小化到650nm波长中的〜Δ1至5％。

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《Journal of Materials Engineering and Performance》 |2018年第6期|共6页
作者
Rabina Bhujel; Umesh Rizal; Amit Agarwal; Bhabani S. Swain; Bibhu P. Swain;
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作者单位

Nano-processing Laboratory Centre for Materials Science and Nanotechnology Sikkim Manipal Institute of Technology;

Nano-processing Laboratory Centre for Materials Science and Nanotechnology Sikkim Manipal Institute of Technology;

Electronics and Communication Engineering Sikkim Manipal Institute of Technology;

School of Advanced Material Engineering Kookmin University;

Nano-processing Laboratory Centre for Materials Science and Nanotechnology Sikkim Manipal Institute of Technology;

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正文语种 eng
中图分类金属学与金属工艺;工程材料学;
关键词
FESEM; FTIR; Raman; silicon nanowires; XPS;

机译：FeSem;FTIR;拉曼;硅氧烷纳米线;XPS;

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1. Synthesis and Characterization of Silicon Nanowires by Electroless Etching [J] . Rabina Bhujel, Umesh Rizal, Amit Agarwal, Journal of Materials Engineering and Performance . 2018,第6期

机译：无电蚀刻硅纳米线的合成与表征
2. Recession and Characterization of Patterned Nanowires Grown by Electroless Etching of Silicon [J] . R. G. Mertens, R. G. Blair, K. B. Sundaram ECS Journal of Solid State Science and Technology . 2012,第1期

机译：硅的化学刻蚀生长的图案化纳米线的衰退和表征
3. Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching [J] . Moumni Besma, Ben Jaballah Abdelkader Applied Surface Science . 2017,第deca15期

机译：银辅助化学腐蚀过程中硅纳米线的氧化剂浓度，形态学特征与腐蚀动力学之间的相关性
4. Characterization of silicon nanowires grown by electroless etching [C] . Mertens Robert G., Sundaram Kalpathy B. Southeastcon, 2012 Proceedings of IEEE . 2012

机译：通过化学蚀刻生长的硅纳米线的表征
5. Material characterization, patterning and adsorbate induced modulation of light emission of porous silicon produced by metal-assisted electroless etching. [D] . Chattopadhyay, Soma. 2006

机译：通过金属辅助化学蚀刻产生的多孔硅的材料表征，图案化和吸附物诱导的光调制。
6. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant [O] . Ya Hu, Kui-Qing Peng, Lin Liu, -1

机译：通过以溶解氧为氧化剂的底物增强金属催化的硅化学刻蚀连续生产硅纳米线
7. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant [O] . Ya Hu, Kui-Qing Peng, Lin Liu, 2014

机译：通过基板增强的金属催化的硅催化蚀刻硅纳米线的连续流量批量生产，其中硅具有溶解氧作为氧化剂

Synthesis and Characterization of Silicon Nanowires by Electroless Etching

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