• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Engineering and Performance >Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H 2 Gas Sensing Performance
【24h】

Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H 2 Gas Sensing Performance

机译：通过溶胶 - 凝胶工艺制备的ZnO基薄膜的合成，制造和表征，H <下标> 2 气体传感性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, an attempt is made to deposit ZnO thin films using sol–gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550?°C for 25?min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000?ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550?°C annealing temperature and operating temperature of 150?°C. Hence, the modified ZnO thin films can be applicable as H~(2)gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.
机译：在本文中，试图使用溶胶 - 凝胶工艺沉积ZnO薄膜，然后在P-硅（100）衬底上的浸涂方法作为氢气传感器，由于毒性的性质和热稳定性低ZnO。薄膜在350,450和550Ω℃的退火温度下退火25Ω·min。然后通过现场发射扫描电子显微镜和透射电子显微镜分析制造的薄膜的结晶质量。在不同的退火温度和氢气浓度范围为100至3000μppm的情况下，对ZnO薄膜的气体传感性能分析进行说明。得到的结果表明，由于退火温度随着550°C退火温度和150Ω·℃的工作温度而实现的最大灵敏度，敏感性随着退火温度的增加而增加。因此，改性的ZnO薄膜可以适用于与未改性的薄膜传感器相比的改进性能的H〜（2）气体传感装置。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号